參數(shù)資料
型號: NP88N04KHE
廠商: NEC Corp.
英文描述: MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET
中文描述: MOS場效應(yīng)晶體管的開關(guān)N溝道功率MOSFET
文件頁數(shù): 7/10頁
文件大?。?/td> 225K
代理商: NP88N04KHE
Data Sheet D14236EJ8V0DS
6
NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE
Figure12. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. CHANNEL TEMPERATURE
Tch - Channel Temperature -
°C
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
Ω
0
50
2
1
4
3
6
5
0
50
100
150
ID = 44 A
8
7
9
VGS = 10 V
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.0
IF
-
Diode
Forward
Current
-
A
0
1.5
VF(S-D) - Source to Drain Voltage - V
0.5
Pulsed
VGS = 10 V
0 V
0.1
1
10
100
1000
Figure14. CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
100
0.1
1000
10000
100000
1
10
100
VGS = 0 V
f = 1 MHz
Coss
Crss
Ciss
Figure15. SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
10
1
0.1
100
1000
10
100
tr
td(on)
td(off)
tf
VDD = 20 V
VGS = 10 V
RG = 1
Ω
Figure16. REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
IF - Diode Forward Current - A
trr
-
Reverse
Recovery
Time
-
ns
di/dt = 100 A/
μs
VGS = 0 V
1
0.1
10
1.0
10
100
1000
100
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
-
Gate
to
Source
Voltage
-
V
QG - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
20
40
80
120
100
90
80
70
60
50
40
30
20
10
0
VDD = 32 V
20 V
8 V
VDS
0
60
100
10
9
8
7
6
5
4
3
2
1
0
VGS
ID = 88 A
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