參數(shù)資料
型號(hào): NP88N04KHE
廠商: NEC Corp.
英文描述: MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET
中文描述: MOS場(chǎng)效應(yīng)晶體管的開(kāi)關(guān)N溝道功率MOSFET
文件頁(yè)數(shù): 5/10頁(yè)
文件大?。?/td> 225K
代理商: NP88N04KHE
Data Sheet D14236EJ8V0DS
4
NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE
TYPICAL CHARACTERISTICS (TA = 25
°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT
-
Percentage
of
Rated
Power
-
%
0
25
50
75
100 125 150 175 200
20
40
60
80
100
TC - Case Temperature -
°C
0
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
TC - Case Temperature -
°C
P
T
-
Total
Power
Dissipation
-
W
0
25
50
75
100 125 150 175 200
350
300
250
200
150
100
50
Figure3. FORWARD BIAS SAFE OPERATING AREA
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
10
1
0.1
100
0.1
1000
1
10
100
ID(pulse)
R
DS(on)
Limited
(V
GS
=
10
V)
ID(DC)
PW
=
10
μs
1 ms
10
ms
DC
Po
wer
Dissipation
Limited
Single pulse
TC = 25
°C
100
μs
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting Tch - Starting Channel Temperature -
°C
E
AS
-
Single
Avalanche
Energy
-
mJ
0
25
100
400
600
800
50
75
100
125
150
175
500
300
200
700
IAS = 75 A
562 mJ
232 mJ
88 A
PW - Pulse Width - s
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t)
-
Transient
Thermal
Resistance
-
°C/
W
10
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
10
100
μμ
Single pulse
Rth(ch-A) = 83.3
°C/W
TC = 25
°C
Rth(ch-C) = 0.52
°C/W
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NP88N04KHE-E1-AY 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET
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