參數(shù)資料
型號(hào): NP84N075NUE
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
中文描述: MOS場(chǎng)效應(yīng)晶體管的開(kāi)關(guān)N溝道功率場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 5/10頁(yè)
文件大小: 217K
代理商: NP84N075NUE
Data Sheet D14675EJ4V0DS
4
NP84N075EUE, NP84N075KUE, NP84N075CUE, NP84N075DUE, NP84N075MUE, NP84N075NUE
TYPICAL CHARACTERISTICS (TA = 25
°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT
-
Percentage
of
Rated
Power
-
%
0
25
50
75
100 125 150 175 200
20
40
60
80
100
TC - Case Temperature -
°C
0
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
TC - Case Temperature -
°C
P
T
-
Total
Power
Dissipation
-
W
0
25
50
75
100 125 150 175 200
280
240
200
160
120
80
40
0
1
10
100
ID
-
Drain
Current
-
A
0.1
VDS - Drain to Source Voltage - V
1
10
100
1000
0.1
100
μs
1 ms
PW
=10
μs
ID(pulse)
ID(DC)
Po
wer
Dissipation
Limited
DC
R
DS(on)
Limited
(V
GS
=
10
V)
Figure3. FORWARD BIAS SAFE OPERATING AREA
TC = 25
°C
Single Pulse
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting Tch - Starting Channel Temperature -
°C
E
AS
-
Single
Avalanche
Energy
-
mJ
25
50
75
100
125
150
175
350
300
250
200
150
100
50
0
IAS = 19 A
52 A
73 A
250 mJ
333 mJ
50 mJ
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
rth(t)
-
Transient
Thermal
Resistance
-
°C/
W
10
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
Single Pulse
Rth(ch-A) = 83.3
°C/W
10
100
Rth(ch-C) = 0.75
°C/W
μ
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