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參數(shù)資料
| 型號： | NP84N075NUE |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | MOS場效應晶體管的開關N溝道功率場效應晶體管 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 217K |
| 代理商： | NP84N075NUE |
Data Sheet D14675EJ4V0DS
3
NP84N075EUE, NP84N075KUE, NP84N075CUE, NP84N075DUE, NP84N075MUE, NP84N075NUE
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 75 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS =
±20 V, VDS = 0 V
±100
nA
Gate to Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250
μA
2.0
3.0
4.0
V
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 42 A
21
43
S
Drain to Source On-state Resistance
RDS(on)
VGS = 10 V, ID = 42 A
9.3
12.5
m
Ω
Input Capacitance
Ciss
VDS = 25 V,
5600
8400
pF
Output Capacitance
Coss
VGS = 0 V,
530
800
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
270
490
pF
Turn-on Delay Time
td(on)
VDD = 38 V, ID = 42 A,
30
66
ns
Rise Time
tr
VGS = 10 V,
21
53
ns
Turn-off Delay Time
td(off)
RG = 0
Ω
72
150
ns
Fall Time
tf
12
30
ns
Total Gate Charge
QG
VDD = 60 V,
100
150
nC
Gate to Source Charge
QGS
VGS = 10 V,
24
nC
Gate to Drain Charge
QGD
ID = 84 A
35
nC
Body Diode Forward Voltage
VF(S-D)
IF = 84 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 84 A, VGS = 0 V,
70
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
μs
200
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
Ω
50
Ω
PG.
L
VDD
VGS = 20 V
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
μ
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10%
90%
VGS
10%
0
ID
90%
td(on)
tr td(off)
tf
10%
τ
ID
0
ton
toff
PG.
50
Ω
D.U.T.
RL
VDD
IG = 2 mA
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NP84N075NUE-S18-AY | 功能描述:MOSFET N-CH 75V 84A TO-262 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| NP84W | 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 4-G, 4) DUP, WH |
| NP865B | 制造商:Pentair Technical Products / Hoffman 功能描述:Nstar 800x600x500 Blk Pkg Black, 30.20x21.77x19.68, Steel |
| NP866B | 制造商:Pentair Technical Products / Hoffman 功能描述:Nstar 800x600x600 Blk Pkg Black, 30.20x21.77x23.62, Steel |
| NP86N04CHE | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
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