參數(shù)資料
型號: NP84N075DUE
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
中文描述: MOS場效應(yīng)晶體管的開關(guān)N溝道功率場效應(yīng)晶體管
文件頁數(shù): 6/10頁
文件大?。?/td> 217K
代理商: NP84N075DUE
Data Sheet D14675EJ4V0DS
6
NP84N075EUE, NP84N075KUE, NP84N075CUE, NP84N075DUE, NP84N075MUE, NP84N075NUE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
30
Pulsed
T
ch
- Channel Temperature -
°
C
R
D
Ω
0
50
5
10
15
0
50
100
150
I
D
= 42 A
20
25
V
GS
= 10 V
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.0
I
F
1.5
V
F(S-D)
- Source to Drain Voltage - V
0.5
0
Pulsed
V
GS
= 10 V
0 V
0.1
1
10
100
1000
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
i
,
o
,
r
10
0.1
100
1000
10000
1
10
100
C
iss
C
oss
C
rss
V
= 0 V
f = 1 MHz
Figure15. SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d
,
r
,
d
,
f
10
1
0.1
1
100
1000
10
100
t
f
t
r
t
d(on)
t
d(off)
V
DD
= 38 V
V
GS
= 10 V
R
G
= 0
Ω
Figure16. REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
I
F
- Diode Forward Current - A
t
r
di/dt = 100 A/
μ
s
V
GS
= 0 V
1
0.1
10
1.0
10
100
100
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
G
Q
G
- Gate Charge - nC
V
D
20
40
80
120
100
80
60
40
20
0
V
DD
= 60 V
38 V
15 V
V
DS
0
60
100
10
8
6
4
2
0
V
GS
I
D
= 84 A
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NP84N075DUE-S12-AY 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP84N075EUE 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP84N075EUE-E1-AY 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP84N075EUE-E2-AY 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP84N075KUE 制造商:Renesas Electronics Corporation 功能描述: