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參數(shù)資料
| 型號： | NP84N075DUE |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | MOS場效應(yīng)晶體管的開關(guān)N溝道功率場效應(yīng)晶體管 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 217K |
| 代理商： | NP84N075DUE |
Data Sheet D14675EJ4V0DS
3
NP84N075EUE, NP84N075KUE, NP84N075CUE, NP84N075DUE, NP84N075MUE, NP84N075NUE
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 75 V, V
GS
= 0 V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
20 V, V
DS
= 0 V
±
100
nA
Gate to Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
2.0
3.0
4.0
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 42 A
21
43
S
Drain to Source On-state Resistance
R
DS(on)
V
GS
= 10 V, I
D
= 42 A
9.3
12.5
m
Ω
Input Capacitance
C
iss
V
DS
= 25 V,
5600
8400
pF
Output Capacitance
C
oss
V
GS
= 0 V,
530
800
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
270
490
pF
Turn-on Delay Time
t
d(on)
V
DD
= 38
V, I
D
= 42
A,
30
66
ns
Rise Time
t
r
V
GS
= 10
V,
21
53
ns
Turn-off Delay Time
t
d(off)
R
G
= 0
Ω
72
150
ns
Fall Time
t
f
12
30
ns
Total Gate Charge
Q
G
V
DD
= 60
V,
100
150
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V,
24
nC
Gate to Drain Charge
Q
GD
I
D
= 84
A
35
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 84 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 84 A, V
GS
= 0 V,
70
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
μ
s
200
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
Ω
50
Ω
PG.
L
V
DD
V
GS
= 20 V
→
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1
s
Duty Cycle
≤
1%
μ
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
I
D
0
t
on
t
off
PG.
50
Ω
D.U.T.
R
L
V
DD
I
G
= 2 mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NP84N075DUE-S12-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP86N04CHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP86N04CHE-S12-AZ | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP86N04DHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP86N04DHE-S12-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NP84N075DUE-S12-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP84N075EUE | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP84N075EUE-E1-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP84N075EUE-E2-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP84N075KUE | 制造商:Renesas Electronics Corporation 功能描述: |
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