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參數(shù)資料
| 型號： | NP83P04PDG-E1-AY |
| 廠商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS場效應(yīng)管 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 188K |
| 代理商： | NP83P04PDG-E1-AY |
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confirm that this is the latest version.
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MOS FIELD EFFECT TRANSISTOR
NP83P04PDG
SWITCHING
P-CHANNEL POWER MOSFET
DATA SHEET
Document No. D18690EJ3V0DS00 (3rd edition)
Date Published May 2007 NS CP(K)
Printed in Japan
2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The NP83P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
NP83P04PDG-E1-AY
Note
NP83P04PDG-E2-AY
Note
Pure Sn (Tin)
Tape 800 p/reel
TO-263 (MP-25ZP)
Note
Pb-free (This product does not contain Pb in external electrode.)
FEATURES
Super low on-state resistance
R
DS(on)1
= 5.3 m
Ω
MAX. (V
GS
=
10 V, I
D
=
41.5 A)
R
DS(on)2
= 8.0 m
Ω
MAX. (V
GS
=
4.5 V, I
D
=
41.5 A)
High current rating: I
D(DC)
=
m
83 A
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
40
m
20
m
83
m
249
150
V
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25
°
C)
Drain Current (pulse)
Note1
Total Power Dissipation (T
C
= 25
°
C)
Total Power Dissipation (T
A
= 25
°
C)
Channel Temperature
V
GSS
V
I
D(DC)
A
I
D(pulse)
A
P
T1
W
P
T2
1.8
W
°
C
°
C
A
T
ch
175
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
T
stg
55 to
+
175
56
I
AS
E
AS
315
mJ
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25
°
C, V
DD
=
30 V, R
G
= 25
Ω
, V
GS
=
20
→
0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
R
th(ch-C)
1.0
°
C/W
Channel to Ambient Thermal Resistance
R
th(ch-A)
83.3
°
C/W
(TO-263)
<R>
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NP83P04PDG-E2-AY | MOS FIELD EFFECT TRANSISTOR |
| NP83P04PDG | MOS FIELD EFFECT TRANSISTOR |
| NP83P06PDG | MOS FIELD EFFECT TRANSISTOR |
| NP83P06PDG-E1-AY | MOS FIELD EFFECT TRANSISTOR |
| NP83P06PDG-E2-AY | MOS FIELD EFFECT TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NP83P04PDG-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| NP83P04PDG-E2-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP83P06PDG | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP83P06PDG-E1-AY | 功能描述:MOSFET P-CH -60V 83A TO-263 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| NP83P06PDG-E2-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
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