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參數(shù)資料
| 型號(hào)： | NP83P06PDG-E2-AY |
| 廠(chǎng)商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 188K |
| 代理商： | NP83P06PDG-E2-AY |
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MOS FIELD EFFECT TRANSISTOR
NP83P06PDG
SWITCHING
P-CHANNEL POWER MOSFET
DATA SHEET
Document No. D18691EJ3V0DS00 (3rd edition)
Date Published May 2007 NS CP(K)
Printed in Japan
2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The NP83P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
NP83P06PDG-E1-AY
Note
NP83P06PDG-E2-AY
Note
Pure Sn (Tin)
Tape 800 p/reel
TO-263 (MP-25ZP)
Note
Pb-free (This product does not contain Pb in external electrode.)
FEATURES
Super low on-state resistance
R
DS(on)1
= 8.8 m
Ω
MAX. (V
GS
=
10 V, I
D
=
41.5 A)
R
DS(on)2
= 12 m
Ω
MAX. (V
GS
=
4.5 V, I
D
=
41.5 A)
High current rating: I
D(DC)
=
m
83 A
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
60
m
20
m
83
m
249
150
V
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25
°
C)
Drain Current (pulse)
Note1
Total Power Dissipation (T
C
= 25
°
C)
Total Power Dissipation (T
A
= 25
°
C)
Channel Temperature
V
GSS
V
I
D(DC)
A
I
D(pulse)
A
P
T1
W
P
T2
1.8
W
°
C
°
C
A
T
ch
175
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
T
stg
55 to
+
175
49
I
AS
E
AS
240
mJ
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25
°
C, V
DD
=
30 V, R
G
= 25
Ω
, V
GS
=
20
→
0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
R
th(ch-C)
1.0
°
C/W
Channel to Ambient Thermal Resistance
R
th(ch-A)
83.3
°
C/W
(TO-263)
<R>
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