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參數(shù)資料
| 型號(hào)： | NP82N06PLG-E2-AY |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | 開關(guān)N溝道功率場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 201K |
| 代理商： | NP82N06PLG-E2-AY |
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confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
NP82N06PLG
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D18777EJ1V0DS00 (1st edition)
Date Published June 2007 NS
Printed in Japan
2007
DESCRIPTION
The NP82N06PLG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
NP82N06PLG-E1-AY
Note
NP82N06PLG-E2-AY
Note
Pure Sn (Tin)
Tape
800 p/reel
TO-263 (MP-25ZP)
Note
Pb-free (This product does not contain Pb in the external electrode.)
FEATURES
Super low on-state resistance
R
DS(on)1
= 6.7
m
Ω
MAX. (V
GS
= 10
V, I
D
= 41
A)
R
DS(on)2
= 8.5
m
Ω
MAX. (V
GS
= 5
V, I
D
= 41
A)
Low input capacitance
C
iss
= 5700 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
60
±
20
±
82
±
270
143
V
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25
°
C)
Drain Current (pulse)
Note1
Total Power Dissipation (T
C
= 25
°
C)
Total Power Dissipation (T
A
= 25
°
C)
Channel Temperature
V
GSS
V
I
D(DC)
A
I
D(pulse)
A
P
T1
W
P
T2
1.8
W
°
C
°
C
A
T
ch
175
Storage Temperature
Repetitive Avalanche Current
Note2
Repetitive Avalanche Energy
Note2
T
stg
55 to
+
175
37
I
AR
E
AR
137
mJ
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
T
ch
≤
150°C, V
DD
= 30 V, R
G
= 25
Ω
, V
GS
= 20
→
0 V, L = 100
μ
H
THERMAL RESISTANCE
Channel to Case Thermal Resistance
R
th(ch-C)
1.05
°C/W
Channel to Ambient Thermal Resistance
R
th(ch-A)
83.3
°C/W
(TO-263)
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