- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363378 > NP82N055MLE-S18-AY (NEC Corp.) MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET PDF資料下載
參數(shù)資料
| 型號(hào)： | NP82N055MLE-S18-AY |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | MOS場(chǎng)效應(yīng)晶體管的開關(guān)N溝道功率場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大小： | 223K |
| 代理商： | NP82N055MLE-S18-AY |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
NP82N055ELE, NP82N055KLE
NP82N055CLE, NP82N055DLE, NP82N055MLE, NP82N055NLE
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D14098EJ6V0DS00 (6th edition)
Date Published October 2007 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
1999, 2000, 2007
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
NP82N055ELE-E1-AY
Note1, 2
NP82N055ELE-E2-AY
Note1, 2
TO-263 (MP-25ZJ) typ. 1.4 g
NP82N055KLE-E1-AY
Note1
NP82N055KLE-E2-AY
Note1
Pure Sn (Tin)
Tape 800 p/reel
TO-263 (MP-25ZK) typ. 1.5 g
NP82N055CLE-S12-AZ
Note1, 2
Sn-Ag-Cu
TO-220 (MP-25) typ. 1.9 g
NP82N055DLE-S12-AY
Note1, 2
TO-262 (MP-25 Fin Cut) typ. 1.8 g
NP82N055MLE-S18-AY
Note1
TO-220 (MP-25K) typ. 1.9 g
NP82N055NLE-S18-AY
Note1
Pure Sn (Tin)
Tube
50 p/tube
TO-262 (MP-25SK) typ. 1.8 g
Notes 1.
Pb-free (This product does not contain Pb in the external electrode.)
2.
Not for new design
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
R
DS(on)1
= 8.4 m
Ω
MAX. (V
GS
= 10 V, I
D
= 41 A)
R
DS(on)2
= 11 m
Ω
MAX. (V
GS
= 5.0 V, I
D
= 41 A)
R
DS(on)3
= 12 m
Ω
MAX. (V
GS
= 4.5 V, I
D
= 41 A)
Low input capacitance
C
iss
= 4400 pF TYP.
Built-in gate protection diode
(TO-220)
(TO-262)
(TO-263)
<R>
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NP82N055NLE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP82N055NLE-S18-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP82N06PLG | SWITCHING N-CHANNEL POWER MOS FET |
| NP82N06PLG-E1-AY | SWITCHING N-CHANNEL POWER MOS FET |
| NP82N06PLG-E2-AY | SWITCHING N-CHANNEL POWER MOS FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NP82N055MUG | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP82N055MUG-S18-AY | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 55V 82A Tube 制造商:Renesas Electronics Corporation 功能描述:SINGLE MOSFET, NCH, 55V, TO220 - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 55V 82A MP-25K |
| NP82N055NHE | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP82N055NHE-S18-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP82N055NLE | 制造商:Renesas Electronics Corporation 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。