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參數(shù)資料
| 型號： | NP80N06CLD |
| 元件分類： | JFETs |
| 英文描述： | 80 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | MP-25, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 39K |
| 代理商： | NP80N06CLD |
Preliminary Product Information D13793EJ2V0PM00
2
NP80N06CLD,NP80N06DLD,NP80N06ELD
ELECTRICAL CHRACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 40 A
9.7
13
m
RDS(on)2
VGS = 5 V, ID = 40 A
12
17
m
RDS(on)3
VGS = 4 V, ID = 40 A
14
20
m
Gate to Source Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 250
A
1.0
1.5
2.0
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 40 A
15
53
S
Drain Leakage Current
IDSS
VDS = 60 V, VGS = 0 V
10
A
Gate to Source Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
A
Input Capacitance
Ciss
VDS = 25 V, VGS = 0 V, f = 1 MHz
2360
3540
pF
Output Capacitance
Coss
490
730
pF
Reverse Transfer Capacitance
Crss
220
390
pF
Turn-on Delay Time
td(on)
ID = 40 A, VGS(on) = 10 V, VDD = 30 V,
66
150
ns
Rise Time
tr
RG = 10
990
2500
ns
Turn-off Delay Time
td(off)
180
400
ns
Fall Time
tf
450
1200
ns
Total Gate Charge 1
QG1
ID = 80 A, VDD = 48 V, VGS = 10 V
60
90
nC
Total Gate Charge 2
QG2
ID = 80 A, VDD = 48 V, VGS = 5 V
34
51
nC
Gate to Source Charge
QGS
10
nC
Gate to Drain Charge
QGD
20
nC
Body Diode Forward Voltage
VF(S-D)
IF = 80 A, VGS = 0 V
0.94
V
Reverse Recovery Time
trr
IF = 80 A, VGS = 0 V, di/dt = 100 A/
s55
ns
Reverse Recovery Charge
Qrr
75
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
RL
VDD
RG
RG = 10
PG.
Duty Cycle
≤ 1 %
VGS (on)
90 %
0
10 %
90 %
ID
0
10 %
ID
VGS
90 %
10 %
td (on)
ton
toff
tr
td (off)
tf
VGS
Wave Form
ID
Wave Form
D.U.T.
50
PG.
VDD
IG = 2 mA
RL
0
VGS
t
s
t = 1
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相關代理商/技術參數(shù) |
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|---|---|
| NP80N06MLG | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP80N06MLG-S18-AY | 功能描述:MOSFET N-CH 60V 80A TO-220 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| NP80N06NLG | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP80N06NLG-S18-AY | 功能描述:MOSFET N-CH 60V 80A TO-262 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| NP80N06PLG | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
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