參數(shù)資料
型號(hào)： NJD2873RLG
廠商： ON SEMICONDUCTOR
元件分類(lèi)： 功率晶體管
英文描述： Plastic Power Transistors
中文描述： 2 A, 50 V, NPN, Si, POWER TRANSISTOR
封裝： LEAD FREE, PLASTIC, CASE 369C-01, DPAK-3
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 60K
代理商： NJD2873RLG
Semiconductor Components Industries, LLC, 2006
November, 2006 Rev. 8
1
Publication Order Number:
NJD2873T4/D
NJD2873T4
Plastic Power Transistors
NPN Silicon DPAK For Surface Mount
Applications
Designed for highgain audio amplifier applications.
Features
PbFree Package is Available
High DC Current Gain
h
FE
= 120 (Min) @ I
C
= 500 mA
= 40 (Min) @ I
C
= 2 A
Low CollectorEmitter Saturation Voltage
V
CE(sat)
= 0.3 Vdc (Max) @ I
C
= 1 A
High CurrentGain Bandwidth Product
f
T
= 65 MHz (Min) @ I
C
= 100 mA
Epoxy Meets UL 94 V0 @ 0.125 in
ESD Ratings: Human Body Model, 3B
Machine Model, C
8000 V
400 V
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorBase Voltage
V
CB
50
Vdc
CollectorEmitter Voltage
V
CEO
50
Vdc
EmitterBase Voltage
V
EB
5
Vdc
Collector Current
Continuous
Peak
I
C
2
3
Adc
Base Current
I
B
0.4
Adc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
15
0.1
W
W/
°
C
Total Device Dissipation @ T
A
= 25
°
C*
Derate above 25
°
C
P
D
1.68
0.011
W
W/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
65 to +175
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance
JunctiontoCase
JunctiontoAmbient*
R
JC
R
JA
10
89.3
°
C/W
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
Device
Package
Shipping
ORDERING INFORMATION
NJD2873
DPAK
75 Units / Rail
SILICON
POWER TRANSISTORS
2 AMPERES
50 VOLTS
15 WATTS
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NJD2873G
DPAK
(PbFree)
75 Units / Rail
MARKING
DIAGRAM
Y
WW
G
= Year
= Work Week
= PbFree Device
DPAK
CASE 369C
STYLE 1
YWW
J
2873G
12
3
4
http://onsemi.com
NJD2873RL
DPAK
1800 Units / Reel
NJD2873RLG
DPAK
(PbFree)
1800 Units / Reel
NJD2873T4
DPAK
2500 Units / Reel
NJD2873T4G
DPAK
(PbFree)
2500 Units / Reel
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NJD2873T4 功能描述:兩極晶體管 - BJT 2A 50V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
NJD2873T4/D 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:NPN Silicon DPAK for Surface Mount Applications
NJD2873T4_06 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Plastic Power Transistors
NJD2873T4G 功能描述:兩極晶體管 - BJT 2A 50V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
NJD2873T4G-CUT TAPE 制造商:ON 功能描述:NJD Series 50 V 2 A Tab Mount NPN Silicon Plastic Power Transistor - TO-252
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