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參數(shù)資料
| 型號： | NJD35N04G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Darlington Power Transistor |
| 中文描述： | 4 A, 350 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 54K |
| 代理商： | NJD35N04G |
Semiconductor Components Industries, LLC, 2006
April, 2006 Rev. 1
1
Publication Order Number:
NJD35N04/D
NJD35N04G
NPN Darlington Power
Transistor
This high voltage power Darlington has been specifically designed
for inductive applications such as Electronic Ignition, Switching
Regulators and Motor Control.
Features
Exceptional Safe Operating Area
High V
CE
;
High Current Gain
These are PbFree Devices
Benefits
Reliable Performance at Higher Powers
Designed for Inductive Loads
Very Low Current Requirements
Applications
Internal Combustion Engine Ignition Control
Switching Regulators
Motor Controls
Light Ballast
Photo Flash
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Sustaining Voltage
V
CEO
350
Vdc
CollectorBase Breakdown Voltage
V
CBO
700
Vdc
CollectorEmitter Breakdown Voltage
V
CES
700
Vdc
EmitterBase Voltage
V
EBO
5.0
Vdc
Collector Current
Continuous
Peak
I
C
I
CM
4.0
8.0
Adc
Base Current
I
B
0.5
Adc
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
45
0.36
W
W/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
65 to
+150
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance
JunctiontoCase
JunctiontoAmbient
R
JC
R
JA
2.78
71.4
°
C/W
Device
Package
Shipping
ORDERING INFORMATION
DARLINGTON
POWER TRANSISTORS
4 AMPERES
350 VOLTS
45 WATTS
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NJD35N04G
DPAK
(PbFree)
75 Units / Rail
MARKING
DIAGRAM
Y
WW
NJD35N04 = Device Code
G
= PbFree Device
= Year
= Work Week
DPAK
CASE 369C
STYLE 1
YWW
NJD
35N04G
12
3
4
http://onsemi.com
NJD35N04T4G
DPAK
(PbFree)
2500/Tape & Reel
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NJD35N04G_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN Darlington Power Transistor |
| NJD35N04T4G | 功能描述:達林頓晶體管 NPN DARL POWER TRAN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| NJD6508 | 制造商:New Japan Radio Co Ltd (NJR/JRC) 功能描述: |
| NJ-DMJ | 制造商:DDK 制造商全稱:DDK Ltd. 功能描述:Conversion Connector |
| NJ-DMJ-PA-1 | 制造商:DDK 制造商全稱:DDK Ltd. 功能描述:Conversion Connector |
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