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參數(shù)資料
| 型號(hào)： | NJ132L |
| 廠商： | InterFET Corporation |
| 英文描述： | Silicon Junction Field-Effect Transistor Low-Noise Amplifier |
| 中文描述： | 硅結(jié)場(chǎng)效應(yīng)晶體管低噪聲放大器 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 130K |
| 代理商： | NJ132L |
At 25°C free air temperature:
NJ132L Process
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
– 15
– 25
– 50
V
nA
mA
V
I
G
= – 1 μA, V
DS
= V
V
GS
= – 10V, V
DS
= V
V
DS
= 10V, V
GS
= V
V
DS
= 10V, I
D
= 1 nA
– 100
100
– 7
5
– 0.5
Dynamic Electrical Characteristics
Forward Transconductance (pulsed)
g
fs
g
fs
C
iss
C
iss
ˉ
N
15
mS
mS
pF
pF
V
DS
= 10V, V
GS
= V
V
DS
= 10V, I
D
= 5 mA
V
DS
= 10V, V
GS
= V
V
DS
= V, V
GS
= – 10V
nV/
√
HZ V
DS
= 4V, I
D
= 5 mA
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
15
15
3.5
1
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Die Size = 0.022" X 0.022"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
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