參數(shù)資料
型號： NJ14AL
廠商： InterFET Corporation
英文描述： Silicon Junction Field-Effect Transistor
中文描述： 硅結(jié)場效應(yīng)晶體管
文件頁數(shù)： 1/2頁
文件大小： 130K
代理商： NJ14AL
At 25°C free air temperature:
NJ14AL Process
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
V
(BR)GSS
I
GSS
V
GS(OFF)
I
DSS
– 15
– 22
– 2.0
V
pA
V
mA
I
G
= – 1 μA, V
DS
= V
V
GS
= – 10V, V
DS
= V
V
GS
= 10V, I
D
= 1 nA
V
DS
= 10V, V
GS
= V
– 100
– 7
20
– 0.5
0.5
10
Dynamic Electrical Characteristics
Common Source Forward Transconductance
Common Source Input Capacitance
Common Source Reverse Transfer Capacitance
C
rss
Equivalent Noise Voltage
g
fs
C
iss
5.5
2.3
0.5
4
mS
pF
pF
V
DS
= 10V, V
GS
= V
V
DS
= 15V, V
GS
= V
V
DS
= 15V, V
GS
= V
nV/
√
HZ V
DS
= 10V, I
D
= 5 mA
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
ˉ
N
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Die Size = 0.016" X 0.016"
All Round Bond Pads = 0.0028"
All Square Bond Pads = 0.004"
Substrate is also Gate.
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