參數(shù)資料
型號(hào)： NIS5112D2R2G
廠商： ON SEMICONDUCTOR
元件分類： 電源管理
英文描述： Electronic Fuse
中文描述： 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8
封裝： LEAD FREE, SOIC-8
文件頁(yè)數(shù)： 1/9頁(yè)
文件大小： 102K
代理商： NIS5112D2R2G
Semiconductor Components Industries, LLC, 2007
March, 2007 Rev. 5
1
Publication Order Number:
NIS5112/D
NIS5112
Electronic Fuse
The NIS5112 is an integrated switch utilizing a high side Nchannel
FET driven by an internal charge pump. This switch features a
SENSEFET which allows for current sensing using inexpensive
chip resistors instead of expensive, low impedance current shunts.
It is designed to operate in 12 V systems and includes a robust
thermal protection circuit.
Features
Integrated Power Device
Power Device Thermally Protected
No External Current Shunt Required
Enable/Timer Pin
Adjustable Slew Rate for Output Voltage
9 V to 18 V Input Range
30 m Typical
Internal Charge Pump
ESD Ratings: Human Body Model (HBM); 4000 V
These are PbFree Devices
Typical Applications
Hard Drives
Figure 1. Block Diagram
Current Limit
4
Source
5, 6, 7
dV/dt
2
GND
1
Enable/Timer
3
Thermal
Latch
Voltage
Regulator
Charge
Pump
Current
Limit
Enable/
Timer
Voltage
Slew Rate
8
V
CC
Overvoltage
Clamp
SOIC8 NB
CASE 751
Device
Package
Shipping
ORDERING INFORMATION
MARKING
DIAGRAM
NIS5112D1R2G
SOIC8
Latch Off
(PbFree)
2500
Tape & Reel
NIS5112D2R2G
SOIC8
AutoRetry
(PbFree)
2500 /
Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
http://onsemi.com
1
8
x
= L for thermal latch off
= H for thermal autoretry
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
A
Y
WW
112x
AYWW
1
8
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