參數(shù)資料
型號： NIS5112
廠商： ON SEMICONDUCTOR
英文描述： Electronic Fuse
中文描述： 電子保險絲
文件頁數(shù)： 3/9頁
文件大小： 102K
代理商： NIS5112
NIS5112
http://onsemi.com
3
Table 3. ELECTRICAL CHARACTERISTICS
(Unless otherwise noted: V
CC
= 12 V, R
LIMIT
= 56 T
J
= 25
°
C)
Characteristics
Symbol
Min
Typ
Max
Unit
POWER FET
Delay Time (Enabling of Chip to Beginning of Conduction (10% of IPK))
T
dly
5.0
ms
Charging Time (Beginning of Conduction to 90% of V
out
)
C
dV/dt
= 1 F, C
load
= 1000 F
t
chg
64
ms
ON Resistance
(I
D
= 2 A, T
J
= 20
°
C) (Note 3)
(I
D
= 2 A, T
J
= 25
°
C)
(I
D
= 2 A, T
J
= 100
°
C) (Note 3)
R
DSon
23.5
28
37
27.5
32
43.5
m
Off State Output Voltage
(V
in
= 12 V
dc
, Enable Low, V
dc
, T
J
= 20
°
C) (Note 3)
(V
in
= 12 V
dc
, Enable Low, T
J
= 25
°
C)
(V
in
= 12 V
dc
, Enable Low, T
J
= 100
°
C) (Note 3)
V
off
120
120
200
mV
Output Capacitance (V
DS
= 12 V
dc
, V
GS
= 0 V
dc
, f = 10 kHz)
396
pF
THERMAL LATCH
Shutdown Temperature (Note 3)
T
SD
125
135
145
°
C
Thermal Hysteresis (Auto Retry Only) (Note 3)
T
hyst
40
°
C
ENABLE/TIMER
Enable Voltage (Turnon)
(R
load
= 2 K, T
J
= 20
°
C) (Note 3)
(R
load
= 2 K, T
J
= 25
°
C)
(R
load
= 2 K, T
J
= 100
°
C) (Note 3)
V
ENon
2.45
2.5
2.7
V
Enable Voltage (Turnoff)
(R
load
= 2 K, T
J
= 20
°
C) (Note 3)
(R
load
= 2 K, T
J
= 25
°
C)
(R
load
= 2 K, T
J
= 100
°
C) (Note 3)
V
ENoff
1.8
1.9
2.0
V
Charging Current (Current Sourced into Timing Cap)
(T
J
= 20
°
C) (Note 3)
(T
J
= 25
°
C)
(T
J
= 100
°
C) (Note 3)
I
Charge
67
70
71
80
83
84
90
92
96
A
OVERVOLTAGE CLAMP
Output Clamping Voltage
(V
CC
= 18 V, T
J
= 20
°
C) (Note 3)
(V
CC
= 18 V, T
J
= 25
°
C)
(V
CC
= 18 V, T
J
= 100
°
C) (Note 3)
V
Clamp
14
14
13
15.5
15
14.5
17
16.2
16
V
CURRENT LIMIT
Short Circuit Current Limit,
(R
extILimit
= 56 , T
J
= 20
°
C) (Note 3)
(R
extILimit
= 56 , T
J
= 25
°
C)
(R
extILimit
= 56 , T
J
= 100
°
C) (Note 3)
Overload Current Limit, (Note 3)
(R
extILimit
= 56 , T
J
= 20
°
C)
(R
extILimit
= 56 , T
J
= 25
°
C)
(R
extILimit
= 56 , T
J
= 100
°
C)
I
LimSS
2.05
2.0
1.7
2.7
2.5
2.3
3.2
3.0
2.7
A
I
LimOL
3.7
3.5
3.4
4.6
4.4
4.3
5.5
5.3
5.2
A
dV/dt CIRCUIT
Slew Rate
(C
dV/dt
= 1 f)
dV/dt
0.130
0.15
0.170
V/ms
Charging Current (Current Sourced into dV/dt Cap)
(T
J
= 20
°
C) (Note 3)
(T
J
= 25
°
C)
(T
J
= 100
°
C) (Note 3)
I
dV/dt
67
70
71
80
83
84
90
92
96
A
Max Capacitor Voltage
V
max
V
CC
V
TOTAL DEVICE
Bias Current (Device Operational, Load Open, V
in
= 12 V)
I
Bias
1.45
2.0
mA
Minimum Operating Voltage
V
min
9.0
V
3. Verified by design.
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