參數(shù)資料
型號: NIS5112_07
廠商: ON SEMICONDUCTOR
英文描述: Electronic Fuse
中文描述: 電子保險絲
文件頁數(shù): 8/9頁
文件大小: 102K
代理商: NIS5112_07
NIS5112
http://onsemi.com
8
There is an inherent delay in the turn on of the electronic
fuse, due to the method of gate drive used. The gate of the
power FET is charged through a high impedance resistor,
and from the time that the gate starts charging until the time
that it reaches its threshold voltage, there will be no
conduction. Once the gate reaches its threshold voltage, the
output current will begin a controlled ramp up phase.
This delay will be added to any timing delay due to the
enable/timer circuit. Figure 8 shows a simplified diagram of
the enable/timer circuit.
Figure 8. Simplified Schematic Diagram of the
Enable/Timer Circuit
+
Enabled
2.5 V
80 A
Enable/
Timer
Thermal Protection Circuit
The temperature limit circuit senses the temperature of the
Power FET and removes the gate drive if the maximum level
is exceeded. The NIS5112 device has two different thermal
limit versions, autoretry and latch off.
AutoRetry Version
The device will shut down when the thermal limit
threshold is reached (T
J
= 135
°
C, typical) and will not turn
back on until the die temperature reduces down to 95
°
C
(40
°
C hysteresis, typical). It will keep autoretrying until
the fault condition is removed or power is turnedoff.
LatchOff Version
For the latchoff version, the device will shut down when
the thermal limit threshold is reached (T
J
= 135
°
C, typical)
and will remain off until power is reset.
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