參數(shù)資料
型號(hào)： NIS5101E1T1
廠商： ON SEMICONDUCTOR
元件分類： 電源管理
英文描述： SMART HotPlug IC/Inrush Limiter/Circuit Breaker
中文描述： 1-CHANNEL POWER SUPPLY SUPPORT CKT, PSSO7
封裝： SPAK-7
文件頁(yè)數(shù)： 12/14頁(yè)
文件大?。?/td> 109K
代理商： NIS5101E1T1
NIS5101
http://onsemi.com
12
The device junction temperature (T
j
) for turnon surge
conditions can be calculated by knowing the thermal
transient resistance of a given pulse duration.
T
j
= T
A
+ [P
D
x R
J(t)
], and
R
J(t)
= (T
j
– T
A
)/P
D
where:
T
j
is the device junction temperature
T
A
is the ambient temperature
P
D
is the power dissipation of the device
R
J(t)
is the value from Figure 20
In order to obtain the thermal transient resistance value
R
J(t)
, it is necessary to calculate the charging time of a
given load capacitance (C
L
), the following equation is used
for these purposes:
i = C dV/dt; then,
t = (C
L
/I
Limit
) x V
in
where:
C
L
is the total load capacitance
I
Limit
is the current limit value
V
in
is the input voltage
By calculating the charging time, the thermal transient
resistance is then given by Figure 20. And finally the
device junction temperature (T
j
) for turnon surge
conditions is calculated. If the calculated T
j
does not
exceed 135
°
C, then the thermal limit circuit is most likely
to not shut the unit down.
To better illustrate this theoretical methodology, an
example is explained:
For the following conditions,
T
A
= 25
°
C
V
in
= 48 V
I
Limit
= 2.0 A
What is the maximum load capacitance that the NIS5101
device can charge before the thermal limit circuit shuts the
unit down
If:
R
J(t)
= (T
j
– T
A
)/P
D
R
J(t)
= (135
°
C–25
°
C)/(48 V x 2.0 A)
R
J(t)
= 1.1
From Figure 20:
R
J(t)
= 1.1 corresponds to 80 msec
Then:
t = (C
L
/I
Limit
) x V
in
C
L
= (t x I
Limit
)/V
in
C
L
= (0.080 x 2)/48
C
L
= 3,330 f
It is important to notice that this theoretical methodology
is intended to be used only for first approximation
purposes.
Enable:
The UVLO pin serves a double function. In
addition to the UVLO function, it can also be used to
disable the chip when it is pulled to the input rail, with an
open drain type of device. The open drain device must be
able to sink the current from the internal 100 k resistor in
parallel with the external adjustment resistor, at the highest
input voltage required.
The turn on voltage at the UVLO pin is approximately
15 V, so any device that can sink the required amount of
current should have a saturation voltage well below this
requirement. The maximum sinking current can be
calculated by the following equation:
Vin(max)100 k
Ienable(max)
RUVLO
RUVLO
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參數(shù)描述
NIS5101E1T1G 功能描述:熱插拔功率分布 -48V Hotswap RoHS:否 制造商:Texas Instruments 產(chǎn)品:Controllers & Switches 電流限制: 電源電壓-最大:7 V 電源電壓-最小:- 0.3 V 工作溫度范圍: 功率耗散: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MSOP-8 封裝:Tube
NIS5101E2T1 功能描述:熱插拔功率分布 SMART HotSwap RoHS:否 制造商:Texas Instruments 產(chǎn)品:Controllers & Switches 電流限制: 電源電壓-最大:7 V 電源電壓-最小:- 0.3 V 工作溫度范圍: 功率耗散: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MSOP-8 封裝:Tube
NIS5101E2T1G 功能描述:熱插拔功率分布 -48V Hotswap RoHS:否 制造商:Texas Instruments 產(chǎn)品:Controllers & Switches 電流限制: 電源電壓-最大:7 V 電源電壓-最小:- 0.3 V 工作溫度范圍: 功率耗散: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MSOP-8 封裝:Tube
NIS5102 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High Side SMART HotPlug IC/Inrush Limiter/Circuit Breaker
NIS5102QP1HT1 功能描述:熱插拔功率分布 MI HI SDE SMRT HOTPLUG RoHS:否 制造商:Texas Instruments 產(chǎn)品:Controllers & Switches 電流限制: 電源電壓-最大:7 V 電源電壓-最小:- 0.3 V 工作溫度范圍: 功率耗散: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MSOP-8 封裝:Tube
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