參數(shù)資料
型號(hào)： NID6002N
廠商： ON SEMICONDUCTOR
英文描述： Self(自保護(hù)型FET（帶過(guò)溫和過(guò)流保護(hù)）)
中文描述： 自（自保護(hù)型場(chǎng)效應(yīng)管（帶過(guò)溫和過(guò)流保護(hù)））
文件頁(yè)數(shù)： 3/6頁(yè)
文件大小： 67K
代理商： NID6002N
NID6002N
http://onsemi.com
3
MOSFET ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Clamped Breakdown Voltage
(V
GS
= 0 V, I
D
= 2 mA)
V
(BR)DSS
60
65
70
V
Zero Gate Voltage Drain Current
(V
DS
= 52 V, V
GS
= 0 V)
I
DSS
27
100
A
Gate Input Current
(V
GS
= 5.0 V, V
DS
= 0 V)
I
GSS
45
200
A
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 150 A)
Threshold Temperature Coefficient
V
GS(th)
1.0
1.85
5.0
2.4
V
mV/
°
C
Static DraintoSource OnResistance (Note 4)
(V
GS
= 10 V, I
D
= 2.0 A, T
J
@ 25
°
C)
R
DS(on)
185
210
m
Static DraintoSource OnResistance (Note 4)
(V
GS
= 5.0 V, I
D
= 2.0 A, T
J
@ 25
°
C)
(V
GS
= 5.0 V, I
D
= 2.0 A, T
J
@ 150
°
C)
R
DS(on)
210
445
240
520
m
SourceDrain Forward On Voltage
(I
S
= 7.0 A, V
GS
= 0 V)
V
SD
0.9
1.1
V
SWITCHING CHARACTERISTICS
Turnon Delay Time
R
L
= 6.6 , V
in
= 0 to 10 V,
V
DD
= 13.8 V, I
D
= 2.0 A, 10% V
in
to 10% I
D
td
(on)
103
120
ns
Turnon Rise Time
R
= 6.6 , V
= 0 to 10 V,
V
DD
= 13.8 V, I
D
= 2.0 A, 10% I
D
to 90% I
D
t
rise
246
285
ns
Turnoff Delay Time
R
L
= 6.6 , V
in
= 0 to 10 V,
V
DD
= 13.8 V, I
D
= 2.0 A, 90% V
in
to 90% I
D
td
(off)
742
850
ns
Turnoff Fall Time
R
= 6.6 , V
= 0 to 10 V,
V
DD
= 13.8 V, I
D
= 2.0 A, 90% I
D
to 10% I
D
t
fall
707
780
ns
Slew Rate ON
R
L
= 6.6 , V
in
= 0 to 10 V,
V
DD
= 13.8 V, I
D
= 2.0 A, 70% to 50% V
DD
dV
DS
/dT
on
73
V/ s
Slew Rate OFF
R
= 6.6 , V
= 0 to 10 V,
V
DD
= 13.8 V, I
D
= 2.0 A, 50% to 70% V
DD
dV
DS
/dT
off
35
V/ s
SELF PROTECTION CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted) (Note 5)
Current Limit
V
DS
= 10 V, V
GS
= 5.0 V, T
J
= 25
°
C (Note 6)
V
DS
= 10 V, V
GS
= 5.0 V, T
J
= 130
°
C (Note 6)
V
DS
= 10 V, V
GS
= 10 V, T
J
= 25
°
C (Note 6)
I
LIM
4.0
4.0
6.4
5.5
7.9
11
11
A
Temperature Limit (Turnoff)
V
GS
= 5.0 V
T
LIM(off)
150
180
200
°
C
Thermal Hysteresis
V
GS
= 5.0 V
T
LIM(on)
10
°
C
Temperature Limit (Turnoff)
V
GS
= 10 V
T
LIM(off)
150
180
200
°
C
Thermal Hysteresis
V
GS
= 10 V
T
LIM(on)
20
°
C
Input Current during
Thermal Fault
V
DS
= 0 V, V
GS
= 5.0 V, T
J
= T
J
> T
(fault)
V
DS
= 0 V, V
GS
= 10 V, T
J
= T
J
> T
(fault)
I
g(fault)
5.5
12
5.2
11
mA
ESD ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
ElectroStatic Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
ESD
8000
400
V
4. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
5. Fault conditions are viewed as beyond the normal operating range of the part.
6. Current limit measured at 380 s after gate pulse.
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