參數(shù)資料
型號: NE678M04-T2
廠商: NEC Corp.
英文描述: MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
中文描述: 中功率NPN硅高頻晶體管
文件頁數(shù): 3/7頁
文件大?。?/td> 62K
代理商: NE678M04-T2
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
INSERTION POWER GAIN,
MAG, MSG vs. COLLECTOR CURRENT
INSERTION POWER GAIN,
MAG, MSG vs. COLLECTOR CURRENT
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C)
NE678M04
INSERTION POWER GAIN,
MAG vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
15
V
CE
= 3 V
f = 2 GHz
10
5
0
1
10
100
V
CE
= 3 V
I
C
= 30 mA
35
30
25
20
15
10
5
0
0.1
1
10
MSG
|S
21e
|
2
MAG
V
CE
= 3 V
f = 1 GHz
25
20
15
10
5
0
1
10
100
|S
21e
|
2
MSG
MAG
V
CE
= 3 V
f = 2 GHz
100
10
1
0
5
10
15
20
25
|S
21e
|
2
MAG
MSG
V
CE
= 3 V
f = 2.5 GHz
100
10
1
0
5
10
15
20
25
|S
21e
|
2
MAG
8
6
4
4
0
2
0
1
10
100
8
12
16
G
a
NF
V
CE
= 3 V
f = 2 GHz
G
T
Collector Current I
C
(mA)
I
2
|
2
,
M
M
Frequency f (mA)
I
2
|
2
,
M
M
Collector Current I
C
(mA)
I
2
|
2
,
M
M
Collector Current I
C
(mA)
I
2
|
2
,
M
Collector Current I
C
(mA)
N
Collector Current I
C
(mA)
A
a
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