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參數(shù)資料
| 型號： | NE678M04-T2 |
| 廠商： | NEC Corp. |
| 英文描述： | MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 中文描述： | 中功率NPN硅高頻晶體管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 62K |
| 代理商： | NE678M04-T2 |
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on a 1.08cm
2
x 1.0 mm thick glass epoxy PCB.
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
2
UNITS
V
V
V
mA
mW
RATINGS
9.0
6.0
2.0
100
205
T
J
Junction Temperature
°
C
150
T
STG
Storage Temperature
°
C
-65 to +150
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°
C)
PART NUMBER
NE678M04-T2
QUANTITY
3k pcs./reel
ORDERING INFORMATION
SYMBOLS
R
th j-a
PARAMETERS
Thermal Resistance from
Junction to Ambient
UNITS
°
C/W
RATINGS
600
THERMAL RESISTANCE
Note:
1. Mounted on a 1.08cm
2
x 1.0 mm thick glass epoxy PCB.
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN
vs. COLLECTOR CURRENT
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C)
NE678M04
300
250
200
150
100
50
0
25
50
75
100
125
150
Mounted on Glass Epoxy PCB
(1.08 cm
2
x 1.0 mm (t) )
1.0
f= 1 MHz
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
2
3
4
5
6
100
90
80
70
60
50
40
30
20
10
0
2
4
6
8
700
μ
A
600
μ
A
500
μ
A
400
μ
A
300
μ
A
200
μ
A
I
B
=100
μ
A
1000
V
CE
= 3 V
100
10
0.1
1
10
100
T
o
Ambient Temperature T
A
(oC)
R
r
Collector to Base Voltage V
CB
(V)
C
C
Collector to Emitter Voltage V
CE
(V)
D
F
)
Collector Current I
C
(mA)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE678M04-T2-A | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE-68 | 制造商:CML Innovative Technologies 功能描述: 制造商:Visual Communications Company (VCC) 功能描述:NE-68 /Refer New Part # 5AC |
| NE680 | 制造商:NEC 制造商全稱:NEC 功能描述:NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68000 | 制造商:NEC 制造商全稱:NEC 功能描述:NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68018 | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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