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參數(shù)資料
| 型號： | NE651R479A-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | 0.4 W L-BAND POWER GaAs HJ-FET |
| 中文描述： | 0.4糯L波段功率GaAs黃建忠場效應管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 69K |
| 代理商： | NE651R479A-T1 |
Data Sheet P13670EJ2V0DS00
2
NE651R479A
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
°
C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
V
DS
8
V
Gate to Source Voltage
V
GSO
4
V
Drain Current
I
D
1.0
A
Gate Forward Current
I
GF
10
mA
Gate Reverse Current
I
GR
10
mA
Total Power Dissipation
P
tot
2.5
W
Channel Temperature
T
ch
150
°
C
Storage Temperature
T
stg
65 to +150
°
C
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
V
DS
3.5
5.5
V
Gain Compression
Gcomp
5.0
Note
dB
Channel Temperature
T
ch
+110
°
C
Note
Recommended maximum Gain Compression is 3.0 dB at V
DS
>
4.2 V
ELECTRICAL CHARACTERISTICS
(T
A
= +25
°
C, unless otherwise specified, using NEC standard test fixture.)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Saturated Drain Current
I
DSS
V
DS
= 2.5 V, V
GS
= 0 V
0.7
A
Pinch-off Voltage
V
p
V
DS
= 2.5 V, I
D
= 14 mA
2.0
0.4
V
Gate to Drain Break Down Voltage
BV
gd
I
gd
= 14 mA
12
V
Thermal Resistance
R
th
Channel to Case
30
50
°
C/W
Output Power
P
out
f = 1.9 GHz, V
DS
= 3.5 V,
26.0
27.0
dBm
Drain Current
I
D
P
in
= +15 dBm, R
g
= 1 k
,
220
mA
Power Added Efficiency
η
add
I
Dset
= 50 mA (RF OFF)
52
60
%
Linear Gain
Note 1
G
L
Note 2
12.0
dB
Notes 1.
P
in
= 0 dBm
2.
DC performance is 100 % testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NE651R479A-T1-A | 功能描述:射頻GaAs晶體管 L&S Band GaAs HJFET RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| NE652N | 制造商:Panasonic Industrial Company 功能描述:IC |
| NE657N | 制造商:Panasonic Industrial Company 功能描述:DISCD I.C. |
| NE661M04 | 功能描述:射頻雙極小信號晶體管 USE 551-NE661M04-A RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE661M04-A | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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