參數(shù)資料
型號: NE650R479A
廠商: NEC Corp.
英文描述: 0.4 W L, S-BAND POWER GaAs MES FET
中文描述: 0.4冊,S波段功率GaAs場效應(yīng)晶體管
文件頁數(shù): 2/8頁
文件大?。?/td> 79K
代理商: NE650R479A
Preliminary Data Sheet
2
NE650R479A
RECOMMENDED OPERATION LIMITS
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
V
DS
6.0
6.0
V
Gain Compression
Gcomp
3.0
dB
Channel Temperature
T
ch
+125
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, Unless otherwise specified, using NEC standard test fixture.)
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Saturated Drain Current
I
DSS
V
DS
= 2.5 V, V
GS
= 0 V
0.35
A
Pinch-off Voltage
V
p
V
DS
= 2.5 V, I
D
= 2 mA
–2.5
–0.5
V
Gate to Drain Break Down
Voltage
BV
gd
I
gd
= 2 mA
13
V
Thermal Resistance
R
th
Channel to Case
30
50
°C/W
Output Power at 1 dB Gain
Compression Point
P
O (1 dB)
26.0
dBm
Drain Current
I
D
140
mA
Power Added Efficiency
η
add
45
%
Linear Gain
Note 1
G
L
f = 1.9 GHz, V
DS
= 6.0 V
Rg = 30
I
Dset
= 100 mA (RF OFF)
Note 2
13.0
14.0
dB
Notes 1.
Pin = 0 dBm
2.
DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
相關(guān)PDF資料
PDF描述
NE6510379A-T1 3 W L-BAND POWER GaAs HJ-FET
NE6510379A 3 W L-BAND POWER GaAs HJ-FET
NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET
NE651R479A-T1 0.4 W L-BAND POWER GaAs HJ-FET
NE678M04 MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NE650R479A-T1 制造商:NEC 制造商全稱:NEC 功能描述:0.4 W L, S-BAND POWER GaAs MES FET
NE650R479A-T1-A 制造商:Renesas Electronics Corporation 功能描述:RF POWER TRANSISTOR MESFET 制造商:Renesas 功能描述:Trans MOSFET N-CH 15V 0.6A 4-Pin Case 79A T/R
NE6510179 制造商:CEL 制造商全稱:CEL 功能描述:NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET
NE6510179A 功能描述:射頻GaAs晶體管 L&S Band GaAs HJFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
NE6510179A-A 功能描述:射頻GaAs晶體管 L&S Band GaAs HJFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: