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參數(shù)資料
| 型號： | NE57600GD-G |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 電源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO6 |
| 封裝： | PLASTIC, MO-178, SOT-26A, 6 PIN |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 113K |
| 代理商： | NE57600GD-G |
Philips Semiconductors
Product data
NE57600
One-cell Lithium-ion battery protection with
over/undercharge and overcurrent protection
2003 Oct 29
4
MAXIMUM RATINGS
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VIN
Input voltage
–0.3
+18
V
VCF(max)
CF pin voltage
–
VCC – 28
V
VVM(max)
VM pin voltage
–
VCC – 28
V
Tamb
Operating ambient temperature range
–20
+70
°C
Tstg
Storage temperature
–40
+125
°C
PD
Power dissipation
–
200
mW
ELECTRICAL CHARACTERISTICS
Characteristics measured with Tamb = 25 °C, unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Min.
Typ.
Max.
UNIT
ICC1
Current consumption 1
VCC = 3.6 V: Set
between CF–GND: 910 k
connected
10.0
14.0
A
ICC2
Current consumption 2
VCC = 3.6 V: IC only
between CF–GND: 910 k
connected
6.0
10.0
A
ICC3
Current consumption 3
VCC = 3.6 V: Discharge FET OFF
between CF–GND: 910 k
not connected
TBD
A
ICC4
Current consumption 4
VCC = 1.9 V: Discharge FET OFF
between CF–GND: 910 k
not connected
0.05
0.3
A
ICC5
Current consumption 5
VCC = 4.5 V: Set
between CF–BG: 910 k
connected
35
60
A
VOV(th)
Over-charge voltage
Tamb = 0 °C 50 °C
VCC: L → H
4.325
4.350
4.375
V
VOV(hyst)
Over-charge hysteresis
VCC: H → L
100
200
300
mV
VUV(th)
Over-discharge voltage
VCC: H → L
2.30
2.40
2.50
V
VUV(rel)
Release over-discharge mode
2.88
3.00
3.12
V
VOC(th)
Over-current detect level
VVM: L → H
174
200
226
mV
VOC(rel)
Release over-current level
VVM: H → L
130
mV
Condition of release over-current mode
Load condition
50
M
VSC
Short detect level
1.3
V
tDLY(OD)
Over-discharge dead time
7.0
10.0
15.0
ms
tOC(DT)
Over-current dead time
VM: 0 V
→ 0.5 V
7.0
10.0
15.0
ms
tDLY(SC)
Short detect delay time
VM: 0 V
→ 2 V
0.02
0.20
ms
tOLY(OV)
Over-charge dead time
CTD = 0.01 F
50
100
150
ms
VGDH
DF pin LOW level
VCC = 3.6 V
VCC–0.3
VCC–0.1
VCC
V
IDFH1
DF pin source current 1
VDF = VCC – 1.0 V
–100
–30
A
IDFH2
DF pin source current 2
VDF = VCC – 0.3 V
–0.40
–0.07
A
IDFL1
DF pin sink current 1
VVM > 1.0 V; VDF = 1.0 V
50
300
A
IDFL2
DF pin sink current 2
VVM > 1.0 V; VDF = 0.3 V
30
100
A
ICF1
CF pin source current 1
VCF = VCC – 1.0 V
–20
–10
A
ICF2
CF pin source current 2
VCF = VCC – 0.3 V
–15
–5
A
VST
Start trigger voltage
VVM: 0 V → –0.5 V
–0.2
–0.1
0
V
VPRO
Over-voltage charger protection
VCC = 3.6 V, between GND–VM voltage
–1.5
–2.5
–3.0
V
VOV
OV charge minimum voltage
VCC = 0 V; Charger voltage
2.0
3.0
V
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相關(guān)代理商/技術(shù)參數(shù) |
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| NE57600HD | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:One-cell Lithium-ion battery protection with over/undercharge and overcurrent protection |
| NE57600JD | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:One-cell Lithium-ion battery protection with over/undercharge and overcurrent protection |
| NE57600WD | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:One-cell Lithium-ion battery protection with over/undercharge and overcurrent protection |
| NE57600XD | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:One-cell Lithium-ion battery protection with over/undercharge and overcurrent protection |
| NE57600YD | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:One-cell Lithium-ion battery protection with over/undercharge and overcurrent protection |
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