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參數(shù)資料
| 型號(hào)： | NE57600GD-G |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 電源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO6 |
| 封裝： | PLASTIC, MO-178, SOT-26A, 6 PIN |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 113K |
| 代理商： | NE57600GD-G |
Philips Semiconductors
Product data
NE57600
One-cell Lithium-ion battery protection with
over/undercharge and overcurrent protection
2003 Oct 29
10
FET STATUS FOR NORMAL AND ABNORMAL
CONDITIONS
Operating Mode and
Charging Condition
Charge
FET (CF)
Discharge
FET (DF)
Normal (charging or discharging)
ON
Overcharge (charging)
OFF
ON
Overcharge (discharging)
ON
Overdischarge (discharging)
OFF
Overdischarge (charging)
ON
Overcurrent (charging or discharging)
OFF
Normal mode:
Overdischarge detection voltage < battery
voltage <overcharge detection voltage
Discharge current < overcurrent detection
level
Overcharge mode:
Battery voltage > overcharge detection
voltage
Overdischarge mode:
Overdischarge detection voltage > battery
voltage
Overcurrent mode:
Discharge current > overcurrent detection
level
voltage between VM and GND =
discharge current
× FET ON resistance
(discharge or charge FET)
Selecting the Optimum MOSFETs
For a single-cell battery pack, a logic-level MOSFET should be
used. These MOSFETs have turn-on thresholds of 0.9 V and are
considered full-on at 4.5 V VGS. Some problem may be
encountered in not having enough gate voltage to fully turn-ON the
series MOSFETs over the battery pack entire operating voltage. If
one deliberately selects an N-Channel MOSFET with a much
greater current rating, a lower RDS(on) over the entire range can be
attained.
The MOSFETs should have a voltage rating greater than 20 V and
should have a high avalanche rating to survive any spikes
generated across the battery pack terminals.
The current rating of the MOSFETs should be greater than four
times the maximum “C-rating” of the cells. The current rating,
though, is more defined by the total series resistance of the battery
pack. The total resistance of the battery pack is given by Equation 1.
Rbat(tot) = RDS(on) + Rcell
(Equation 1)
The total pack resistance is typically determined by the system
requirements. The total pack resistance directly determines how
much voltage droop will occur during pulses in load current.
Another consideration is the forward-biased safe operating area of
the MOSFET. During a short-circuit, the discharge current can easily
reach 10–15 times the “C-rating” of the cells. The MOSFET must
survive this current prior to the discharge MOSFET can be turned
OFF. So having an FBSOA envelope that exceeds 20 amperes for
5 ms would be safe.
PACKING METHOD
SL01305
TAPE DETAIL
COVER TAPE
CARRIER TAPE
REEL
ASSEMBLY
TAPE
GUARD
BAND
BARCODE
LABEL
BOX
Figure 11.
Tape and reel packing method.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE57600HD | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:One-cell Lithium-ion battery protection with over/undercharge and overcurrent protection |
| NE57600JD | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:One-cell Lithium-ion battery protection with over/undercharge and overcurrent protection |
| NE57600WD | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:One-cell Lithium-ion battery protection with over/undercharge and overcurrent protection |
| NE57600XD | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:One-cell Lithium-ion battery protection with over/undercharge and overcurrent protection |
| NE57600YD | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:One-cell Lithium-ion battery protection with over/undercharge and overcurrent protection |
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