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參數(shù)資料
| 型號(hào)： | NE5510179A |
| 廠商： | NEC Corp. |
| 英文描述： | 3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS |
| 中文描述： | 3.5V的操作硅射頻功率MOSFET為1.9 GHz的輸電功放 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 39K |
| 代理商： | NE5510179A |
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°
C)
SYMBOLS
V
DS
V
GS
I
D
I
D
P
IN
P
T
T
CH
T
STG
PARAMETERS
Drain Supply Voltage
Gate Supply Voltage
Drain Current (continuous)
Drain Current (Pulse Test)
2
Input Power
3
Total Power Dissipation
Channel Temperature
Storage Temperature
UNITS
V
V
RATINGS
8.5
6
A0.5
1.0
27
1.6
125
-55 to +125
A
dBm
W
°
C
°
C
RECOMMENDED OPERATING CONDITIONS
SYMBOLS
V
DS
V
GS
I
DS
P
IN
freq
T
OP
PARAMETERS
Drain to Supply Voltage
Gate Supply Voltage
Drain Current (Pulse Test)
1
Input Power
2
UNITS
V
V
A
dBm
GHz
°
C
TYP
3.5
2.0
–
22
–
25
MAX
6.0
2.5
0.5
23
2.0
85
Operating Frequency Range
Operating Temperature
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Duty Cycle 50%, Ton = 1ms.
3. Freq = 1.9 GHz, V
DS
= 3.5 V.
PART NUMBER
QTY
NE5510179A-T1
Note:
1.
Embossed tape 12 mm wide. Gate pin face to perforations side
of the tape.
1 K/Reel
ORDERING INFORMATION
1
NE5510179A
D
D
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C)
D
D
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
Gate to Source Voltage, V
GS
(V)
DRAIN CURRENT vs.
DRAIN TO SOURCE CURRENT
Drain to Source Current, V
DS
(V)
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
2
4
6
8
10
12
14
16
V
GS
(MAX) = 10 V,
Step = 1.0 V
1000
100
10
1
0
1.0
3.0
2.5
2.0
1.5
V
DS
= 3.5 V
Note:
1. Duty Cycle 50%, Ton = 1ms.
2. Freq = 1.9 GHz, V
DS
= 3.5 V.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE5510179A-T1 | 制造商:CEL 制造商全稱:CEL 功能描述:3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS |
| NE5510279A | 制造商:Renesas Electronics Corporation 功能描述:RF POWER TRANSISTOR LDMOS |
| NE5510279A-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS |
| NE5510279A-T1-A | 制造商:Renesas Electronics Corporation 功能描述:RF POWER TRANSISTOR LDMOS |
| NE5511279A | 功能描述:射頻MOSFET電源晶體管 RO 551-NE5511279A-A RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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