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參數(shù)資料
| 型號： | NE33284A |
| 廠商： | NEC Corp. |
| 英文描述： | L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| 中文描述： | L至X波段超低噪聲放大器N溝道黃建忠場效應(yīng)管 |
| 文件頁數(shù)： | 8/10頁 |
| 文件大?。?/td> | 62K |
| 代理商： | NE33284A |
NE33284A
8
RECOMMENDED SOLDERING CONDITIONS
The following conditions (see table below) must be met when soldering this product.
Please consult with our sales offices in case other soldering process is used, or in case soldering is done under
different conditions.
<TYPES OF SURFACE MOUNT DEVICE>
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL” (IEI-
1207)
[NE33284A]
Soldering process
Soldering conditions
Symbol
Infrared ray reflow
Peak package’s surface temperature: 230 C or below, Reflow
time: 30 seconds or below (210 C or higher), Number of reflow
process: 1, Exposure limit*: None
IR30-00
Partial heating method
Terminal temperature: 230 C or below, Flow time: 10 seconds or
below, Exposure limit*: None
*
:
Exposure limit before soldering after dry-pack package is opened.
Storage conditions: 25 C and relative humidity at 65 % or less.
Note
: Do not apply more than a single process at once, except for “Partial heating method”.
PRECAUTION
:
Avoid high static voltage and electric fields, because this device is Hetero Junction field effect
transistor with shottky barrier gate.
Caution
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the Japanese law concerned and so on, especially in case of removal.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE33284A_98 | 制造商:NEC 制造商全稱:NEC 功能描述:SUPER LOW NOISE HJ FET |
| NE33284AS | 制造商:NEC 制造商全稱:NEC 功能描述:SUPER LOW NOISE HJ FET |
| NE33284A-SL | 制造商:NEC 制造商全稱:NEC 功能描述:L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE33284A-T1 | 功能描述:MOSFET DISC BY CEL 01/02 84AS LO-NOISE HJ FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NE33284A-T1A | 制造商:NEC 制造商全稱:NEC 功能描述:L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
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