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參數(shù)資料
| 型號： | NE33200 |
| 廠商： | NEC Corp. |
| 英文描述： | SUPER LOW NOISE HJ FET |
| 中文描述： | 超低噪聲黃建忠場效應(yīng)管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 85K |
| 代理商： | NE33200 |
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
DS
Drain to Source Voltage
V
4.0
V
GS
Gate to Source Voltage
V
-3.0
I
DS
Drain Current
mA
I
DSS
I
GRF
Gate Current
μ
A
280
P
IN
RF Input (CW)
dBm
15
T
CH
Channel Temperature
°
C
175
T
STG
Storage Temperature
°
C
-65 to +175
P
T2
Total Power Dissipation
mW
240
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°
C)
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
T
)
Ambient Temperature, T
A
(
°
C)
D
D
FREQ.
(GHz)
1
2
4
6
8
10
12
14
16
18
20
22
24
26
NF
OPT
(dB)
0.29
0.31
0.35
0.42
0.52
0.63
0.75
0.9
1.05
1.25
1.5
1.8
2.2
2.6
G
A
(dB)
21.3
18.3
15.3
13.5
12.2
11.3
10.5
9.9
9.3
8.8
8.3
7.9
7.6
7.3
Γ
OPT
MAG
0.82
0.81
0.76
0.71
0.64
0.55
0.48
0.41
0.37
0.35
0.37
0.38
0.39
0.40
ANG
8
17
41
63
77
95
112
130
144
164
180
-166
-154
-142
Rn/50
0.39
0.36
0.33
0.30
0.27
0.24
0.22
0.19
0.18
0.15
0.13
0.11
0.10
0.08
TYPICAL NOISE PARAMETERS
1
(T
A
= 25
°
C)
V
DS
= 2 V, I
DS
= 10 mA
Note:
1. Operation in excess of any one of these parameters may result in
permanent damage.
2. With chip mounted on infinite heat sink.
Drain Current, I
DS
(mA)
N
NOISE FIGURE and GAIN
vs. DRAIN CURRENT
V
DS
= 2 V, f = 12 GHz
A
A
T
m
Note:
1.
Noise Parameters include Bond Wires:
Gate:
Total 2 wires, 1 per bond pad 0.0129" (327
μ
m)
long each wire.
Drain:
Total 2 wires, 1 per bond pad 0.0118" (300
μ
m)
long each wire.
Source: Total 4 wires, 2 per side, 0.0071" (180
μ
m)
long each wire.
Wire:
0.0007" (17.8
μ
m) dia. gold.
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
TRANSCONDUCTANCE vs. DRAIN CURRENT
V
DS
= 2.0 V
120
Drain to Source Voltage, V
DS
(V)
Drain Current, I
DS
(mA)
NE33200
0
0
50
100
150
200
250
50
100 117
150
200
250
Mounted on
Infinite
Heat sink
G
A
N
F
2.0
1.6
1.2
0.8
0.4
0
0
5
10
15
20
25
30
35
40
6
8
10
12
14
16
Tuned at each I
DS
Tuned at 10 mA only
50
40
30
20
10
0
0
0.5
-0.1 V
-0.2 V
-0.3 V
-0.4 V
-0.5 V
1
1.5
2
2.5
3
V
GS
= 0 V
100
80
60
40
20
0
0
10
40
50
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE33200M | SUPER LOW NOISE HJ FET |
| NE33200N | SUPER LOW NOISE HJ FET |
| NE33284A-T1 | KJ 6C 6#12 PIN PLUG |
| NE33284A-T1A | L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE33284 | L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE33200M | 制造商:NEC 制造商全稱:NEC 功能描述:SUPER LOW NOISE HJ FET |
| NE33200N | 制造商:NEC 制造商全稱:NEC 功能描述:SUPER LOW NOISE HJ FET |
| NE33284 | 制造商:NEC 制造商全稱:NEC 功能描述:L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE33284A | 制造商:NEC 制造商全稱:NEC 功能描述:L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE33284A_98 | 制造商:NEC 制造商全稱:NEC 功能描述:SUPER LOW NOISE HJ FET |
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