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參數(shù)資料
| 型號： | NE23383B |
| 廠商： | NEC Corp. |
| 英文描述： | SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET (SPACE QUALIFIED) |
| 中文描述： | 超低噪聲放大器N溝道場效應(yīng)黃建忠（空間限定） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 22K |
| 代理商： | NE23383B |
FEATURES
SUPER LOW NOISE FIGURE:
NF = 0.35 dB TYP at f = 4 GHz
HIGH ASSOCIATED GAIN:
G
A
= 15.0 dB TYP at f = 4 GHz
GATE LENGTH =
L
G
= 0.3
μ
m
GATE WIDTH =
W
G
= 280
μ
m
HERMETIC SEALED CERAMIC PACKAGE
HIGH RELIABILITY
NE23383B
SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ FET
(SPACE QUALIFIED)
California Eastern Laboratories
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 83B
DESCRIPTION
The NE23383B is a heterojunction FET that utilizes the
heterojunction to create high mobility electrons. The device
features mushroom shaped gate for decreased gate resis-
tance and improved power handling capabilities. The mush-
room gate structure also results in low noise figure and high
associated gain. The device is housed in a rugged hermeti-
cally sealed metal ceramic stripline package selected for
industrial and space applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
PART NUMBER
PACKAGE OUTLINE
NE23383B
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
NF
Noise Figure at V
DS
= 2 V, I
D
= 10 mA, f = 4 GHz
dB
0.35
0.45
G
A
Associated Gain at V
DS
= 2 V, I
D
= 10 mA, f = 4 GHz
dB
13.0
15.0
I
DSS
Saturated Drain Current at V
DS
= 2 V, V
GS
= 0 V
mA
15
40
80
V
GS(off)
Gate to Source Cut off Voltage at V
DS
= 2 V, I
D
= 100
μ
A
V
-0.2
-0.8
-2.0
g
M
Transconductance at V
DS
= 2 V, I
D
= 10 mA
ms
45
70
I
GDO
Gate to Drain Leakage Current at V
GD
= -3 V
μ
A
0.5
10
I
GSO
Gate to Source Leakage Current at V
GS
= -3 V
μ
A
0.5
10
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
APPLICATION
BEST SUITED FOR LOW NOISE AMPS STAGE AT
C AND X BAND
1.45 MAX
0.1 -0.03
4.0 MIN (ALL LEADS)
0.5
±
0.1
1.88
±
0.3
1.88
±
0.3
1.0
±
0.1
1
2
4
3
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