參數(shù)資料
型號(hào)： NE1617ADS,112
廠商： NXP Semiconductors
文件頁(yè)數(shù)： 13/30頁(yè)
文件大?。?/td> 305K
描述： IC TEMP MONITOR 16SSOP
標(biāo)準(zhǔn)包裝： 100
功能： 溫度監(jiān)控系統(tǒng)（傳感器）
傳感器類(lèi)型： 內(nèi)部和外部
感應(yīng)溫度： -55°C ~ 125°C，外部傳感器
精確度： ±3°C 本地（最大），±5°C 遠(yuǎn)程（最大）
拓?fù)洌?/td> ADC，多路復(fù)用器，寄存器庫(kù)
輸出類(lèi)型： SMBus?
輸出警報(bào)： 是
輸出風(fēng)扇： 無(wú)
電源電壓： 3 V ~ 5.5 V
工作溫度： -55°C ~ 125°C
安裝類(lèi)型： 表面貼裝
封裝/外殼： 16-SSOP（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝： 16-SSOP
包裝： 管件
其它名稱(chēng)： 935268119112
NE1617ADS
NE1617ADS-ND
NE1617A
All information provided in this document is subject to legal disclaimers.
?NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 5  20 March 2012
13 of 30
NXP Semiconductors
NE1617A
Temperature monitor for microprocessor systems
9.   Application design-in information
9.1  Factors affecting accuracy
9.1.1   Remote sensing diode
The NE1617A is designed to work with substrate transistors built into processors CPUs
or with discrete transistors. Substrate transistors are generally PNP types with the
collector connected to the substrate. Discrete types can be either a PNP or an NPN
transistor connected as a diode (base shorted to collector). If an NPN transistor is used,
the collector and base are connected to D+ and the emitter to D-. If a PNP transistor is
used, the collector and base are connected to D- and the emitter to D+. Substrate
transistors are found in a number of CPUs. To reduce the error due to variations in these
substrate and discrete transistors, a number of factors should be taken into consideration:
" The ideality factor, n
f
, of the transistor. The ideality factor is a measure of the deviation
of the thermal diode from the ideal behavior. The NE1617A is trimmed for an n
f
 value
of 1.008. Equation 2
 can be used to calculate the error introduced at a temperature
T 癈 when using a transistor whose n
f
 does not equal 1.008. Consult the processor
data sheet for n
f
 values.
This value can be written to the offset register and is automatically added to or
subtracted from the temperature measurement.
(2)
"  Some CPU manufacturers specify the high and low current levels of the substrate 
transistors. The I
source
 high current level of the NE1617A is 100 mA and the low level
current is 10 mA.
If a discrete transistor is being used with the NE1617A, the best accuracy is obtained by
choosing devices according to the following criteria:
"  Base-emitter voltage greater than 0.25 V at 6 mA, at the highest operating 
temperature.
"  Base-emitter voltage less than 0.95 V at 100 mA, at the lowest operating temperature.
"  Base resistance less than 100 W.
"  Small variation in h
FE
 (say 50 to 150) that indicates tight control of V
BE
 characteristics.
Transistors such as 2N3904, 2N3906, or equivalents in SOT23 packages are suitable
devices to use. See Table 11
 for representative devices.
T
n
natural
1.008

(
)
1.008
------------------------------------------
273.15 Kelvin   T
+
(
)
?/DIV>
=
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