參數(shù)資料
型號(hào): NCP4429
廠商: ON SEMICONDUCTOR
英文描述: 6A High-Speed MOSFET Drivers
中文描述: 6A條高速M(fèi)OSFET驅(qū)動(dòng)器
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 87K
代理商: NCP4429
NCP4420, NCP4429
http://onsemi.com
3
Characteristic
Unit
Max
Typ
Min
Test Conditions
Symbol
Output
Peak Output Current
IPK
VDD = 18 V
(See Figure 5)
6.0
A
Latch–Up Protection
Withstand Reverse Current
IREV
Duty Cycle
t
2%
300
μ
s
1.5
A
Switching Time
(Note 1.)
Rise Time
tR
tF
tD1
tD2
Figure 1, CL = 2500 pF
Figure 1, CL = 2500 pF
Figure 1
25
35
nsec
Fall Time
25
35
nsec
Delay Time 1
55
75
nsec
Delay Time 2
Figure 1
55
75
nsec
Power Supply
Power Supply Current
IS
VIN = 3.0 V
VIN = 0 V
0.45
55
1.5
150
mA
μ
A
Operating Input Voltage
VDD
4.5
18
V
1. Switching times guaranteed by design.
ELECTRICAL CHARACTERISTICS
(Measured over operating temperature range with 4.5 V
specified.)
VDD
18 V, unless otherwise
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Unit
Input
Logic 1 High Input Voltage
VIH
VIL
2.4
V
Logic 0 Low Input Voltage
0.8
V
Input Voltage Range
VIN (Max)
IIN
–5.0
VDD +0.3
10
V
Input Current
0 V
VIN
VDD
–10
μ
A
Output
High Output Voltage
VOH
VOL
ROH
See Figure 1
VDD –0.025
V
Low Output Voltage
See Figure 1
0.025
V
Output Resistance, High
IOUT = 10 mA,
VDD = 18 V
3.0
5.0
Output Resistance, Low
ROL
IOUT = 10 mA,
VDD = 18 V
2.3
5.0
Switching Time
(Note 1.)
Rise Time
tR
tF
tD1
tD2
Figure 1, CL = 2500 pF
Figure 1, CL = 2500 pF
Figure 1
32
60
nsec
Fall Time
34
60
nsec
Delay Time 1
50
100
nsec
Delay Time 2
Figure 1
65
100
nsec
Power Supply
Power Supply Current
IS
VIN = 3.0 V
VIN = 0 V
0.45
60
3.0
400
mA
μ
A
Operating Input Voltage
VDD
4.5
18
V
1. Switching times guaranteed by design.
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