參數(shù)資料
型號: NCP4429
廠商: ON SEMICONDUCTOR
英文描述: 6A High-Speed MOSFET Drivers
中文描述: 6A條高速MOSFET驅(qū)動器
文件頁數(shù): 2/8頁
文件大?。?/td> 87K
代理商: NCP4429
NCP4420, NCP4429
http://onsemi.com
2
FUNCTIONAL BLOCK DIAGRAM
OUTPUT
VDD
INPUT
GND
NCP4420
4.7 V
300 mV
NCP4429
500
μ
A
EFFECTIVE
INPUT
C = 38 pF
ABSOLUTE MAXIMUM RATINGS*
Rating
Value
Unit
Supply Voltage
+20
V
Input Voltage
–5.0 to VDD
50
V
Input Current (VIN
Power Dissipation, TA
SOIC
PDIP
VDD)
mA
70
°
C
470
730
mW
Derating Factors (To Ambient)
SOIC
PDIP
4.0
8.0
mW/
°
C
Storage Temperature Range, Tstg
Operating Temperature (Chip)
–65 to +150
°
C
+150
°
C
Operating Temperature Range (Ambient), TA
Lead Temperature (Soldering, 10 sec)
–40 to +85
°
C
+300
°
C
*Static–sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses
above those listed under “Absolute Maximum Ratings’’ may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(TA = +25
°
C with 4.5 V
Characteristic
VDD
18 V, unless otherwise specified.)
Symbol
Test Conditions
Min
Typ
Max
Unit
Input
Logic 1 High Input Voltage
VIH
VIL
2.4
1.8
V
Logic 0 Low Input Voltage
1.3
0.8
V
Input Voltage Range
VIN (Max)
IIN
–5.0
VDD +0.3
10
V
Input Current
0 V
VIN
VDD
–10
μ
A
Output
High Output Voltage
VOH
VOL
ROH
See Figure 1
VDD –0.025
V
Low Output Voltage
See Figure 1
0.025
V
Output Resistance, High
IOUT = 10 mA,
VDD = 18 V
2.1
2.8
Output Resistance, Low
ROL
IOUT = 10 mA,
VDD = 18 V
1.5
2.5
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