VMM Q VBB
參數(shù)資料
型號: NBSG16MNR2
廠商: ON Semiconductor
文件頁數(shù): 6/12頁
文件大?。?/td> 0K
描述: IC RCVR/DRVR RSECL SIGE DF 16QFN
產(chǎn)品變化通告: LTB Notification 06/Feb/2008
標(biāo)準(zhǔn)包裝: 3,000
類型: 收發(fā)器
應(yīng)用: 儀表
安裝類型: 表面貼裝
封裝/外殼: 16-VFQFN 裸露焊盤
供應(yīng)商設(shè)備封裝: 16-QFN(3x3)
包裝: 帶卷 (TR)
其它名稱: NBSG16MNR2OSTR
NBSG16
http://onsemi.com
3
50 W
VTD
D
VTD
VMM
Q
VBB
VEE
VCC
Figure 3. Logic Diagram
75 kW
36.5 KW
Table 2. INTERFACING OPTIONS
INTERFACING OPTIONS
CONNECTIONS
CML
Connect VTD and VTD to VCC
LVDS
Connect VTD and VTD together
ACCOUPLED
Bias VTD and VTD Inputs within (VIHCMR)
Common Mode Range
RSECL, PECL, NECL
Standard ECL Termination Techniques
LVTTL
The external voltage should be applied to the
unused complementary differential input.
Nominal voltage is 1.5 V for LVTTL.
LVCMOS
VMM should be connected to the unused
complementary differential input.
Table 3. ATTRIBUTES
Characteristics
Value
Internal Input Pulldown Resistor (D, D)
75 kW
Internal Input Pullup Resistor (D)
36.5 kW
ESD Protection
Human Body Model
Machine Model
> 2 kV
> 100 V
Moisture Sensitivity (Note 1)
Pb Pkg
PbFree Pkg
FCBGA16
QFN16
Level 3
Level 1
Level 3
Level 1
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V0 @ 0.125 in
Transistor Count
167
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
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