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參數(shù)資料
| 型號： | NB3N853531EDTR2G |
| 廠商： | ON Semiconductor |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC FANOUT BUFFER LVPECL 20TSSOP |
| 標(biāo)準(zhǔn)包裝： | 2,500 |
| 類型： | 扇出緩沖器（分配），多路復(fù)用器 |
| 電路數(shù)： | 1 |
| 比率 - 輸入:輸出： | 2:4 |
| 差分 - 輸入:輸出： | 無/是 |
| 輸入： | LVCMOS，LVTTL，晶體 |
| 輸出： | LVPECL |
| 頻率 - 最大： | 266MHz |
| 電源電壓： | 3.135 V ~ 3.465 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 20-TSSOP（0.173"，4.40mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 20-TSSOP |
| 包裝： | 帶卷 (TR) |
NB3N853531E
http://onsemi.com
6
Figure 6. For 155.52 MHz Carrier, the NB3N853531E Additive Phase Noise (dBc/Hz) verses SSB Offset Frequency
(Hz) Integrated Jitter from 12 kHz to 20 MHz (Upper Heavy Line) is 88.1 fs RMS. The E8663B Source Generator
Additive Phase Noise (Lower Light Line) is 70.1 fs RMS. Where tJIT = /(tJIToutput)2 (tJITinput)2 = 53 fs
NB3N853531E
Source Generator
Application Crystal Input Interface
Figure 7 shows the NB3N853531E device crystal
oscillator interface using a typical parallel resonant crystal.
A parallel crystal with loading capacitance CL = 18 pF could
use Series Load Caps C1 = 32 pF and C2 = 32 pF as nominal
values, after subtracting a typical 4 pF of stray cap per line.
The frequency accuracy and duty cycle skew can be fine
tuned by adjusting the C1 and C2 values. For example,
increasing the C1 and C2 values will reduce the operational
frequency. Note R1 is optional and may be 0
W.
Figure 7. NB3N853531E Crystal Oscillator Interface
*R1 is optional. Assuming 4 pF stray cap per pin.
32 pF
C1
C2
XTAL_IN/CLK
XTAL_OUT
R1*
X1 18 pF
Parallel Resonant
Crystal
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