參數資料
| 型號： | NB3F8L3010CMNG |
| 廠商： | ON Semiconductor |
| 文件頁數： | 9/13頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC FANOUT BUFFER 3:10 32QFN |
| 標準包裝： | 74 |
| 類型： | 扇出緩沖器（分配），多路復用器 |
| 電路數： | 1 |
| 比率 - 輸入:輸出： | 3:10 |
| 差分 - 輸入:輸出： | 是/無 |
| 輸入： | HCSL, LVDS, LVPECL, SSTL, 晶體 |
| 輸出： | LVCMOS，LVTTL |
| 頻率 - 最大： | 200MHz |
| 電源電壓： | 2.375 V ~ 3.465 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 32-VFQFN 裸露焊盤 |
| 供應商設備封裝： | 32-QFN（5x5） |
| 包裝： | 管件 |
NB3F8L3010C
http://onsemi.com
5
Table 9. POWER SUPPLY DC CHARACTERISTICS VDD = 3.3 V ± 5% (3.135 V to 3.465 V) or VDD = 2.5 V ±5% (2.375 V to
2.625 V) and VDDOn = 3.3 V ± 5% (3.135 V to 3.465 V) or 2.5 V ± 5% (2.375 V to 2.625 V) or 1.8 V ± 0.2 V (1.6 V to 2.0 V) or 1.5 V ±
0.15 V (1.35 V to 1.65 V); TA = 40°C to 85°C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
IDD
VDD Power Supply
Current
OE = 0, no load
3.3 V ± 5%; VDDOn = 3.3 V ± 5% or 2.5 V ± 5% or
1.8 V ± 0.2 V or 1.5 V ± 0.15 V
2.5 V ± 5%; VDDOn = 2.5 V ± 5% or 1.8 V ± 0.2 V
or 1.5 V ± 0.15 V
30
50
mA
IDDO
VDDO Power Supply
Current
OE = 0, no load
3.3 V ± 5%; VDDOn = 3.3 V ± 5% or 2.5 V ± 5% or
1.8 V ± 0.2 V or 1.5 V ± 0.15 V
2.5 V ± 5%; VDDOn = 2.5 V ± 5% or 1.8 V ± 0.2 V
or 1.5 V ± 0.15 V
5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
Table 10. DC CHARACTERISTICS TA = 40°C to 85°C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
VIH
LVCMOS / LVTTL Input High Voltage
(OE, SELx)
VDD = 3.3 V ±5%
VDD = 2.5 V ± 5%
2
1.7
VDD + 0.3
V
VIL
LVCMOS / LVTTL Input Low Voltage
(OE, SELx)
VDD = 3.3 V ±5%
VDD = 2.5 V ± 5%
0.3
0.8
0.7
V
IIH
Input High Current
OE, SELx,
CLKx/CLKx
VDD = VIN = 3.465 V
VDD = VIN = 3.465 V or 2.625 V
150
mA
IIL
Input Low Current
OE, SELx
CLKx
VDD = 3.465 V; VIN = 0.0 V
VDD = 3.465 V or 2.625 V VIN = 0.0 V
5
150
mA
VOH
Output High Voltage (Note 4)
VDDOn = 3.3 V ± 5%
2.6
V
VDDOn = 2.5 V ± 5%
1.8
VDDOn = 1.8 V ± 0.2 V
1.2
VDDOn = 1.5 V ± 0.15 V
0.9
VOL
Output Low Voltage (Note 4)
VDDOn = 3.3 V ± 5% or 2.5 V ± 5%
0.5
V
VDDOn = 1.8 V ± 0.2 V
0.4
VDDOn = 1.5 V ± 0.15 V
0.37
VPP
PeaktoPeak Input Voltage
VIL > 0.3 V
CLKx/CLKx
VDD = 3.3 V ±5% or VDD = 2.5 V ± 5%
0.15
1.3
V
VIHCMR
Input High Level Common Mode
Range
VCM = VIH; VIL > 0.3 V CLKx/CLKx
VDD = 3.3 V ±5% or VDD = 2.5 V ± 5%
0.5
VDD 0.85
V
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
4. Outputs terminated with 50 W to VDDOn/2. See Parameter Measurement Information..
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