- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄189003 > NAND512W3B3BZA6E (NUMONYX) 64M X 8 FLASH 3V PROM, 35 ns, PBGA63 PDF資料下載
參數(shù)資料
| 型號： | NAND512W3B3BZA6E |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 64M X 8 FLASH 3V PROM, 35 ns, PBGA63 |
| 封裝： | 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-63 |
| 文件頁數(shù)： | 5/59頁 |
| 文件大?。?/td> | 998K |
| 代理商： | NAND512W3B3BZA6E |
第1頁第2頁第3頁第4頁當(dāng)前第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁
13/59
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
MEMORY ARRAY ORGANIZATION
The memory array is made up of NAND structures
where 32 cells are connected in series.
The memory array is organized in blocks where
each block contains 64 pages. The array is split
into two areas, the main area and the spare area.
The main area of the array is used to store data
whereas the spare area is typically used to store
Error correction Codes, software flags or Bad
Block identification.
In x8 devices the pages are split into a 2048 Byte
main area and a spare area of 64 Bytes. In the x16
devices the pages are split into a 1,024 Word main
area and a 32 Word spare area. Refer to Figure
Bad Blocks
The NAND Flash 2112 Byte/ 1056 Word Page de-
vices may contain Bad Blocks, that is blocks that
contain one or more invalid bits whose reliability is
not guaranteed. Additional Bad Blocks may devel-
op during the lifetime of the device.
The Bad Block Information is written prior to ship-
ping (refer to Bad Block Management section for
more details).
Table 4. shows the minimum number of valid
blocks in each device. The values shown include
both the Bad Blocks that are present when the de-
vice is shipped and the Bad Blocks that could de-
velop later on.
These blocks need to be managed using Bad
Blocks Management, Block Replacement or Error
Correction Codes (refer to SOFTWARE ALGO-
RITHMS section).
Table 4. Valid Blocks
Figure 8. Memory Array Organization
Density of Device
Min
Max
8 Gbits
8032
8192
4 Gbits
4016
4096
2 Gbits
2008
2048
1Gbit
1004
1024
512 Mbits
502
512
AI09854
Block = 64 Pages
Page = 2112 Bytes (2,048 + 64)
2,048 Bytes
2048 Bytes
Spare
Area
64
Bytes
Block
8 bits
64
Bytes
8 bits
Page
Page Buffer, 2112 Bytes
Block = 64 Pages
Page = 1056 Words (1024 + 32)
1,024 Words
1024 Words
Spare
Area
Main Area
32
Words
16 bits
32
Words
16 bits
Page Buffer, 1056 Words
Block
Page
x8 DEVICES
x16 DEVICES
Main Area
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NAND512W3B3AN1 | 64M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND512W3B3BN1F | 64M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND04GR4B3AN1 | 256M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 |
| NAND02GW3B3BZB1F | 256M X 8 FLASH 3V PROM, 35 ns, PBGA63 |
| NAND02GW3B3BN1F | 256M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND512W4A0AN6E | 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| NAND512W4A0AZA6E | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 512MBIT 32MX16 12US 63VFBGA - Trays |
| NAND64GAH0HZA5F | 制造商:Micron Technology Inc 功能描述:NAND EMMC - Tape and Reel |
| NAND64GW3FGAZN6F | 制造商:Micron Technology Inc 功能描述:FULL CUSTOM MCP - Tape and Reel |
| NAND98R3M0CZBB5E | 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。