參數(shù)資料
型號： NAND512R4A1AN1T
廠商： NUMONYX
元件分類： PROM
英文描述： 32M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48
封裝： 12 X 20 MM, PLASTIC, TSOP-48
文件頁數(shù)： 55/56頁
文件大小： 882K
代理商： NAND512R4A1AN1T
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
8/56
Table 2. Product Description
Figure 2. Logic Diagram
Table 3. Signal Names
Reference
Part Number
Density
Bus
Width
Page
Size
Block
Size
Memory
Array
Operating
Voltage
Timings
Package
Random
Access
Max
Sequential
Access
Min
Page
Program
Typical
Block
Erase
Typical
NAND128-A
NAND128R3A
128Mbit
x8
512+16
Bytes
16K+512
Bytes
32 Pages x
1024 Blocks
1.7 to 1.95V
10s
60ns
200s
2ms
TSOP48
WSOP48
VFBGA55
NAND128W3A
2.7 to 3.6V
10s
50ns
200s
NAND128R4A
x16
256+8
Words
8K+256
Words
1.7 to 1.95V
10s
60ns
200s
NAND128W4A
2.7 to 3.6V
10s
50ns
200s
NAND256-A
NAND256R3A
256Mbit
x8
512+16
Bytes
16K+512
Bytes
32 Pages x
2048 Blocks
1.7 to 1.95V
10s
60ns
200s
2ms
TSOP48
WSOP48
VFBGA55
NAND256W3A
2.7 to 3.6V
10s
50ns
200s
NAND256R4A
x16
256+8
Words
8K+256
Words
1.7to 1.95V
10s
60ns
200s
NAND256W4A
2.7 to 3.6V
10s
50ns
200s
NAND512-A
NAND512R3A
512Mbit
x8
512+16
Bytes
16K+512
Bytes
32 Pages x
4096 Blocks
1.7to 1.95V
10s
60ns
200s
2ms
TFBGA55
NAND512W3A
2.7 to 3.6V
10s
50ns
200s
NAND512R4A
x16
256+8
Words
8K+256
Words
1.7 to 1.95V
10s
60ns
200s
NAND512W4A
2.7 to 3.6V
10s
50ns
200s
NAND512-A
NAND512R3A
512Mbit
x8
512+16
Bytes
16K+512
Bytes
32 Pages x
4096 Blocks
1.7to 1.95V
15s
60ns
200s
2ms
TSOP48
WSOP48
VFBGA63
NAND512W3A
2.7 to 3.6V
12s
50ns
200s
NAND512R4A
x16
256+8
Words
8K+256
Words
1.7 to 1.95V
15s
60ns
200s
NAND512W4A
2.7 to 3.6V
12s
50ns
200s
NAND01G-A
NAND01GR3A
1Gbit
x8
512+16
Bytes
16K+512
Bytes
32 Pages x
8192 Blocks
1.7 to 1.95V
15s
60ns
200s
2ms
TSOP48
TFBGA63
NAND01GW3A
2.7 to 3.6V
12s
50ns
200s
NAND01GR4A
x16
256+8
Words
8K+256
Words
1.7 to 1.95V
15s
60ns
200s
NAND01GW4A
2.7 to 3.6V
12s
50ns
200s
AI07557C
W
I/O8-I/O15, x16
VDD
NAND Flash
E
VSS
WP
AL
CL
RB
R
I/O0-I/O7, x8/x16
I/O8-15
Data Input/Outputs for x16 devices
I/O0-7
Data Input/Outputs, Address Inputs,
or Command Inputs for x8 and x16
devices
AL
Address Latch Enable
CL
Command Latch Enable
E
Chip Enable
R
Read Enable
RB
Ready/Busy (open-drain output)
W
Write Enable
WP
Write Protect
VDD
Supply Voltage
VSS
Ground
NC
Not Connected Internally
DU
Do Not Use
相關(guān)PDF資料
PDF描述
NAND512R4A1AV6 32M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND01GR3A1AN1T 128M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND01GR3A3AN1T 128M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND01GR4A3AZB6F 64M X 16 FLASH 1.8V PROM, 15000 ns, PBGA63
NAND01GW4A3AN1T 64M X 16 FLASH 3V PROM, 12000 ns, PDSO48
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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NAND512R4A2DDI6 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film
NAND512W3A0AN6 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND512W3A0AN6E 功能描述:閃存 2.7-3.6V 512M(64Mx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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