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參數(shù)資料
| 型號(hào)： | NAND512R3B3CZA6 |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 64M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 |
| 封裝： | 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63 |
| 文件頁數(shù)： | 26/59頁 |
| 文件大?。?/td> | 998K |
| 代理商： | NAND512R3B3CZA6 |
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NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
32/59
Automatic Page 0 Read at Power-Up
The 3V devices (NANDxxxWxB) feature Automat-
ic Page 0 Read at Power-Up, which allows the mi-
crocontroller to directly download boot code from
page 0, without requiring any command or ad-
dress input sequence. The Automatic Page 0
Read feature is particularly suited for applications
that boot from the NAND.
The 1.8V devices (NANDxxxRxB) do not have the
Automatic Page 0 Read at Power-Up feature.
Automatic Page 0 Read Description. At power-
up, once the supply voltage has reached the
threshold level, VDDth, all digital outputs revert to
their reset state and the internal NAND device
functions (reading, writing, erasing) are enabled.
The PRL pin activates the Automatic Page 0 Read
function. When PRL is High at power-up, the de-
vice automatically switches to read mode where,
as in any read operation, the device is busy for a
time tBLBH1 during which data is transferred to the
Page Buffer. Once the data transfer is complete
the Ready/Busy signal goes High. The data can
then be read out sequentially on the I/O bus by
pulsing the Read Enable, R, signal.
Figure 18. shows the power-up waveforms for de-
vices featuring the Automatic Page Read option.
For details on how to order this option, refer to Ta-
Figure 18. Automatic Page 0 Read at Power-Up
Note: 1. VDDth is equal to 2.5V for 3V Power Supply devices and to 1.5V for 1.8V Power Supply devices.
VDD
W
E
AL
CL
RB
R
I/O
tBLBH1
Data1
Data2
Data3
Last
Data
Busy
Data Output
VDDth (1)
ai08665
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NAND01GR4B3CZA1E | 64M X 16 FLASH 1.8V PROM, 35 ns, PBGA63 |
| NAND01GR4B3CZA6E | 64M X 16 FLASH 1.8V PROM, 35 ns, PBGA63 |
| NAND01GW4B3BN6T | 64M X 16 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND01GW4B3CZA1E | 64M X 16 FLASH 3V PROM, 35 ns, PBGA63 |
| NAND08GR4B2BZC6T | 512M X 16 FLASH 1.8V PROM, 35 ns, PBGA63 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND512R4A2CWFD | 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film |
| NAND512R4A2CZA6 | 制造商:Micron Technology Inc 功能描述:512MB. 3V X8 NO OPTION TSOP48TSOP-1 48 12X20 AL 42 - Trays |
| NAND512R4A2DDI6 | 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film |
| NAND512W3A0AN6 | 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| NAND512W3A0AN6E | 功能描述:閃存 2.7-3.6V 512M(64Mx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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