參數(shù)資料
型號(hào)： NAND256W3A1AN1T
廠商： NUMONYX
元件分類： PROM
英文描述： 32M X 8 FLASH 3V PROM, 10000 ns, PDSO48
封裝： 12 X 20 MM, PLASTIC, TSOP-48
文件頁數(shù)： 25/56頁
文件大?。?/td> 882K
代理商： NAND256W3A1AN1T
31/56
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
■
First Level Wear-leveling, new data is
programmed to the free blocks that have had
the fewest write cycles
■
Second Level Wear-leveling, long-lived data is
copied to another block so that the original
block can be used for more frequently-
changed data.
The Second Level Wear-leveling is triggered when
the difference between the maximum and the min-
imum number of write cycles per block reaches a
specific threshold.
Error Correction Code
An Error Correction Code (ECC) can be imple-
mented in the Nand Flash memories to identify
and correct errors in the data.
For every 2048 bits in the device it is recommend-
ed to implement 22 bits of ECC (16 bits for line par-
ity plus 6 bits for column parity).
An ECC model is available in VHDL or Verilog.
Contact the nearest ST Microelectronics sales of-
fice for more details.
Figure 24. Error Detection
Hardware Simulation Models
Behavioral simulation models. Denali Software
Corporation models are platform independent
functional models designed to assist customers in
performing entire system simulations (typical
VHDL/Verilog). These models describe the logic
behavior and timings of NAND Flash devices, and
so allow software to be developed before hard-
ware.
IBIS simulations models. IBIS (I/O Buffer Infor-
mation Specification) models describe the behav-
ior of the I/O buffers and electrical characteristics
of Flash devices.
These models provide information such as AC
characteristics, rise/fall times and package me-
chanical data, all of which are measured or simu-
lated at voltage and temperature ranges wider
than those allowed by target specifications.
IBIS models are used to simulate PCB connec-
tions and can be used to resolve compatibility is-
sues when upgrading devices. They can be
imported into SPICETOOLS.
New ECC generated
during read
XOR previous ECC
with new ECC
All results
= zero?
22 bit data = 0
YES
11 bit data = 1
NO
1 bit data = 1
Correctable
Error
ECC Error
No Error
ai08332
>1 bit
= zero?
YES
NO
相關(guān)PDF資料
PDF描述
NAND01GR3A1AN1F 128M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND01GR4A3AZB6F 64M X 16 FLASH 1.8V PROM, 15000 ns, PBGA63
NAND512R4A1AN1T 32M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND512R4A1AV6 32M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND01GR3A1AN1T 128M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND256W3A2AN6E 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 256MBIT 32MX8 12US 48TSOP - Trays
NAND256W3A2AN6F 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 2.7V TO 3.6V 256MBIT 32MX8 12US 48TSOP - Tape and Reel
NAND256W3A2BD06 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND256W3A2BE06 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND256W3A2BN6E 功能描述:閃存 NAND 256 MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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