參數(shù)資料
型號： NAND08GW4B2CZC1F
廠商： NUMONYX
元件分類： PROM
英文描述： 512M X 16 FLASH 3V PROM, 35 ns, PBGA63
封裝： 9.50 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, LFBGA-63
文件頁數(shù)： 26/59頁
文件大?。?/td> 998K
代理商： NAND08GW4B2CZC1F
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
32/59
Automatic Page 0 Read at Power-Up
The 3V devices (NANDxxxWxB) feature Automat-
ic Page 0 Read at Power-Up, which allows the mi-
crocontroller to directly download boot code from
page 0, without requiring any command or ad-
dress input sequence. The Automatic Page 0
Read feature is particularly suited for applications
that boot from the NAND.
The 1.8V devices (NANDxxxRxB) do not have the
Automatic Page 0 Read at Power-Up feature.
Automatic Page 0 Read Description. At power-
up, once the supply voltage has reached the
threshold level, VDDth, all digital outputs revert to
their reset state and the internal NAND device
functions (reading, writing, erasing) are enabled.
The PRL pin activates the Automatic Page 0 Read
function. When PRL is High at power-up, the de-
vice automatically switches to read mode where,
as in any read operation, the device is busy for a
time tBLBH1 during which data is transferred to the
Page Buffer. Once the data transfer is complete
the Ready/Busy signal goes High. The data can
then be read out sequentially on the I/O bus by
pulsing the Read Enable, R, signal.
Figure 18. shows the power-up waveforms for de-
vices featuring the Automatic Page Read option.
For details on how to order this option, refer to Ta-
Figure 18. Automatic Page 0 Read at Power-Up
Note: 1. VDDth is equal to 2.5V for 3V Power Supply devices and to 1.5V for 1.8V Power Supply devices.
VDD
W
E
AL
CL
RB
R
I/O
tBLBH1
Data1
Data2
Data3
Last
Data
Busy
Data Output
VDDth (1)
ai08665
相關PDF資料
PDF描述
NAND08GW4B3AZC6 512M X 16 FLASH 3V PROM, 35 ns, PBGA63
NAND08GW4B3BN1T 512M X 16 FLASH 3V PROM, 35 ns, PDSO48
NAND08GW4B3BN6E 512M X 16 FLASH 3V PROM, 35 ns, PDSO48
NAND08GW4B3BN6T 512M X 16 FLASH 3V PROM, 35 ns, PDSO48
NAND08GR3B2AN1F 1G X 8 FLASH 1.8V PROM, 35 ns, PDSO48
相關代理商/技術參數(shù)
參數(shù)描述
NAND128W3A0AN6 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND128W3A0AN6E 功能描述:閃存 2.7-3.6V 128M(16Mx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND128W3A0AN6F 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND128W3A0BN6E 功能描述:閃存 2.7-3.6V 128M(16Mx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND128W3A0BN6F 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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