參數(shù)資料
型號： NAND01GW4B3BN6T
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 64M X 16 FLASH 3V PROM, 35 ns, PDSO48
封裝： 12 X 20 MM, PLASTIC, TSOP-48
文件頁數(shù)： 9/59頁
文件大?。?/td> 998K
代理商： NAND01GW4B3BN6T
17/59
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
Table 8. Address Definitions, x8
Table 9. Address Definitions, x16
Address
Definition
A0 - A11
Column Address
A12 - A17
Page Address
A18 - A26
Block Address
512Mb device
A18 - A27
Block Address
1Gb device
A18 - A28
Block Address
2Gb device
A18 - A29
Block Address
4Gb device
A18 - A30
Block Address
8Gb device
Address
Definition
A0 - A10
Column Address
A11 - A16
Page Address
A17 - A25
Block Address
512Mb device
A17 - A26
Block Address
1Gb device
A17 - A27
Block Address
2Gb device
A17 - A28
Block Address
4Gb device
A17 - A29
Block Address
8Gb device
相關(guān)PDF資料
PDF描述
NAND01GW4B3CZA1E 64M X 16 FLASH 3V PROM, 35 ns, PBGA63
NAND08GR4B2BZC6T 512M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
NAND08GR4B3BN1 512M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
NAND512R3B3BZA6E 64M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
NAND512W3B3BN6E 64M X 8 FLASH 3V PROM, 35 ns, PDSO48
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND01GW4BZA6 制造商:Micron Technology Inc 功能描述:1G, 3V, NAND, VFBGA63, IND - Trays
NAND01GW4M0AZB5E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
NAND01GW4M0AZB5F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
NAND01GW4M0AZC5E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
NAND01GW4M0AZC5F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
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