參數(shù)資料
型號: NAND01GW4B3BN6T
廠商: STMICROELECTRONICS
元件分類: PROM
英文描述: 64M X 16 FLASH 3V PROM, 35 ns, PDSO48
封裝: 12 X 20 MM, PLASTIC, TSOP-48
文件頁數(shù): 42/59頁
文件大?。?/td> 998K
代理商: NAND01GW4B3BN6T
47/59
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
Figure 29. Read Status Register AC Waveform
Figure 30. Read Electronic Signature AC Waveform
Note: 1. Refer to Table 14. for the values of the Manufacturer and Device Codes, and to Table 15. for the information contained in Byte4.
tELWL
tDVWH
Status Register
Output
70h/ 72h/
73h/ 74h/ 75h
CL
E
W
R
I/O
tCLHWL
tWHDX
tWLWH
tWHCLL
tCLLRL
tDZRL
tRLQV
tEHQZ
tRHQZ
tWHRL
tELQV
tWHEH
ai08666
(Data Setup time)
(Data Hold time)
90h
00h
Man.
code
Device
code
CL
E
W
AL
R
I/O
tRLQV
Read Electronic
Signature
Command
1st Cycle
Address
ai08667
(Read ES Access time)
tALLRL1
00h
Byte4
Byte3
Byte1
Byte2
see Note.1
相關PDF資料
PDF描述
NAND01GW4B3CZA1E 64M X 16 FLASH 3V PROM, 35 ns, PBGA63
NAND08GR4B2BZC6T 512M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
NAND08GR4B3BN1 512M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
NAND512R3B3BZA6E 64M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
NAND512W3B3BN6E 64M X 8 FLASH 3V PROM, 35 ns, PDSO48
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