參數(shù)資料
型號(hào): NAND01GW3A2CN6T
廠商: NUMONYX
元件分類(lèi): PROM
英文描述: 128M X 8 FLASH 3V PROM, 35 ns, PDSO48
封裝: 12 X 20 MM, PLASTIC, TSOP-48
文件頁(yè)數(shù): 14/57頁(yè)
文件大?。?/td> 916K
代理商: NAND01GW3A2CN6T
21/57
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
Figure 12. Pointer Operations for Programming
ai07591
I/O
Address
Inputs
Data Input
10h
80h
Areas A, B, C can be programmed depending on how much data is input. Subsequent 00h commands can be omitted.
AREA A
00h
Address
Inputs
Data Input
10h
80h
00h
I/O
Address
Inputs
Data Input
10h
80h
Areas B, C can be programmed depending on how much data is input. The 01h command must be re-issued before each program.
AREA B
01h
Address
Inputs
Data Input
10h
80h
01h
I/O
Address
Inputs
Data Input
10h
80h
Only Areas C can be programmed. Subsequent 50h commands can be omitted.
AREA C
50h
Address
Inputs
Data Input
10h
80h
50h
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NAND01GW3A2CV1F 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GW3A2CV1T 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
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