參數(shù)資料
型號(hào)： NAND01GR4A3AZB6F
廠商： NUMONYX
元件分類： PROM
英文描述： 64M X 16 FLASH 1.8V PROM, 15000 ns, PBGA63
封裝： 8.50 X 15 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TFBGA-63
文件頁數(shù)： 48/56頁
文件大小： 882K
代理商： NAND01GR4A3AZB6F
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
52/56
PART NUMBERING
Table 28. Ordering Information Scheme
Devices are shipped from the factory with the memory content bits, in valid blocks, erased to ’1’.
For further information on any aspect of this device, please contact your nearest ST Sales Office.
Example:
NAND512R3A
0
A ZA
1
T
Device Type
NAND = NAND Flash Memory
Density
128 = 128Mb
256 = 256Mb
512 = 512Mb
01G = 1Gb
Operating Voltage
R = VDD = 1.7 to 1.95V
W = VDD = 2.7 to 3.6V
Bus Width
3 = x8
4 = x16
Family Identifier
A = 528 Bytes/ 264 Word Page
Device Options
0 = No Options
1 = Automatic Page 0 Read at Power-up
2 = Chip Enable Don’t Care Enabled
3 = Chip Enable Don’t Care Enabled and Automatic Page 0 Read at Power-up
Product Version
A = 120nm process technology
(Single Die 128Mb, 256Mb, 512Mb) (Dual Die 512Mb, 1Gb)
Package
N = TSOP48 12 x 20mm (all devices)
V = WSOP48 12 x 17 x 0.65mm (128Mbit, 256Mbit and 512Mbit devices)
ZA = VFBGA55 8 x 10 x 1mm, 6x8 ball array, 0.8mm pitch (128Mbit and 256Mbit devices)
ZB = TFBGA55 8 x 10 x 1.2mm, 6x8 ball array, 0.8mm pitch (512Mbit Dual Die devices)
ZA = VFBGA63 8.5 x 15 x 1mm, 6x8 ball array, 0.8mm pitch (512Mbit devices)
ZB = TFBGA63 8.5 x 15 x 1.2mm, 6x8 ball array, 0.8mm pitch (1Gbit Dual Die devices)
Temperature Range
1 = 0 to 70 °C
6 = –40 to 85 °C
Option
blank = Standard Packing
T = Tape & Reel Packing
E = Lead Free Package, Standard Packing
F = Lead Free Package, Tape & Reel Packing
相關(guān)PDF資料
PDF描述
NAND512R4A1AN1T 32M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND512R4A1AV6 32M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND01GR3A1AN1T 128M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND01GR3A3AN1T 128M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND01GR4A3AZB6F 64M X 16 FLASH 1.8V PROM, 15000 ns, PBGA63
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND01GR4B 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2ADI6 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND01GR4B2AN1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2AN6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2AZA1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*