參數(shù)資料
型號(hào): NAND01GR4A3AZB6F
廠商: NUMONYX
元件分類: PROM
英文描述: 64M X 16 FLASH 1.8V PROM, 15000 ns, PBGA63
封裝: 8.50 X 15 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TFBGA-63
文件頁(yè)數(shù): 39/56頁(yè)
文件大?。?/td> 882K
代理商: NAND01GR4A3AZB6F
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
44/56
Figure 34. Block Erase AC Waveform
Note: Address cycle 3 is required for 512Mb and 1Gb devices only.
Figure 35. Reset AC Waveform
D0h
60h
SR0
70h
ai08038b
tWHBL
tWLWL
tBLBH3
Block Erase
Setup Command
Block Erase
CL
E
W
AL
R
I/O
RB
Confirm
Code
Read Status Register
Block Address Input
(Erase Busy time)
(Write Cycle time)
Add.
cycle 1
Add.
cycle 3
Add.
cycle 2
W
R
I/O
RB
tBLBH4
AL
CL
FFh
ai08043
(Reset Busy time)
相關(guān)PDF資料
PDF描述
NAND512R4A1AN1T 32M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND512R4A1AV6 32M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND01GR3A1AN1T 128M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND01GR3A3AN1T 128M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND01GR4A3AZB6F 64M X 16 FLASH 1.8V PROM, 15000 ns, PBGA63
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