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參數(shù)資料
| 型號： | NAND01GR3A2AZA6 |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 128M X 8 FLASH 1.8V PROM, 15000 ns, PBGA63 |
| 封裝： | 8.50 X 15 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-63 |
| 文件頁數(shù)： | 14/56頁 |
| 文件大小： | 871K |
| 代理商： | NAND01GR3A2AZA6 |
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NAND128-A, NAND256-A, NAND512-A, NAND01G-A
Read Memory Array
Each operation to read the memory area starts
with a pointer operation as shown in the Pointer
Operations section. Once the area (main or spare)
has been selected using the Read A, Read B or
Read C commands four bus cycles (for 512Mb
and 1Gb devices) or three bus cycles (for 128Mb
and 256Mb devices) are required to input the ad-
dress (refer to Table 6.) of the data to be read.
The device defaults to Read A mode after power-
up or a Reset operation. Devices, where page0 is
read automatically at power-up, are available on
request.
When reading the spare area addresses:
■
A0 to A3 (x8 devices)
■
A0 to A2 (x16 devices)
are used to set the start address of the spare area
while addresses:
■
A4 to A7 (x8 devices)
■
A3 to A7 (x16 devices)
are ignored.
Once the Read A or Read C commands have
been issued they do not need to be reissued for
subsequent read operations as the pointer re-
mains in the respective area. However, the Read
B command is effective for only one operation,
once an operation has been executed in Area B
the pointer returns automatically to Area A and so
another Read B command is required to start an-
other read operation in Area B.
Once a read command is issued three types of op-
erations are available: Random Read, Page Read
and Sequential Row Read.
Random Read. Each time the command is is-
sued the first read is Random Read.
Page Read. After the Random Read access the
page data is transferred to the Page Buffer in a
the transfer is complete the Ready/Busy signal
goes High. The data can then be read out sequen-
tially (from selected column address to last column
address) by pulsing the Read Enable signal.
Sequential Row Read. After the data in last col-
umn of the page is output, if the Read Enable sig-
nal is pulsed and Chip Enable remains Low then
the next page is automatically loaded into the
Page Buffer and the read operation continues. A
Sequential Row Read operation can only be used
to read within a block. If the block changes a new
read command must be issued.
Refer to Figure 15. and Figure 16. for details of Se-
quential Row Read operations.
To terminate a Sequential Row Read operation set
the Chip Enable signal to High for more than tEHEL.
Sequential Row Read is not available when the
Chip Enable Don’t Care option is enabled.
Figure 13. Read (A,B,C) Operations
CL
E
W
AL
R
I/O
RB
00h/
01h/ 50h
ai07595
Busy
Command
Code
Address Input
Data Output (sequentially)
tBLBH1
(read)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND01GR3A2AZA6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GR3A2AZA6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GR3A2AZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GR3A2AZB1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GR3A2AZB1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
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