- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄361068 > N16T1630C2BZ (Electronic Theatre Controls, Inc.) 16Mb Ultra-Low Power Asynchronous CMOS SRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | N16T1630C2BZ |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 16Mb Ultra-Low Power Asynchronous CMOS SRAM |
| 中文描述： | 16Mb的超低功耗CMOS SRAM的異步 |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 245K |
| 代理商： | N16T1630C2BZ |
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
(DOC#14-02-007 REV F ECN# 01-1103)
3
NanoAmp Solutions, Inc.
N16T1630C2B
Absolute Maximum Ratings
1
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Item
Symbol
Rating
Unit
Voltage on any pin relative to V
SS
Voltage on V
CC
Supply Relative to V
SS
V
IN,OUT
V
CC
P
D
T
STG
T
A
T
SOLDER
–0.3 to V
CC
+0.3
V
–0.3 to 4.5
V
Power Dissipation
500
mW
Storage Temperature
–40 to 125
o
C
Operating Temperature
-40 to +85
o
C
Soldering Temperature and Time
260
o
C, 10sec
o
C
Operating Characteristics (Over Specified Temperature Range)
Item
Symbol
Test Conditions
Min.
Typ
1
1. Typical values are measured at Vcc=Vcc Typ., T
A
=25°C and not 100% tested.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
Max
Unit
Supply Voltage
V
CC
V
IH
V
IL
V
OH
V
OL
I
LI
I
LO
2.7
3.0
3.6
V
Input High Voltage
2.2
V
CC
+0.3
V
Input Low Voltage
–0.3
0.6
V
Output High Voltage
I
OH
= -0.2mA
I
OL
= 0.2mA
V
IN
= 0 to V
CC
OE = V
IH
or Chip Disabled
V
CC
=3.6 V, V
IN
=V
IH
or V
IL
Chip Enabled, I
OUT
= 0
V
CC
=3.6 V, V
IN
=V
IH
or V
IL
Chip Enabled, I
OUT
= 0
V
IN
= V
CC
or 0V
Chip Disabled
t
A
= 85
o
C, V
CC
= 3.0 V
V
CC
–0.2
V
Output Low Voltage
0.2
V
Input Leakage Current
0.5
μ
A
Output Leakage Current
0.5
μ
A
Read/Write Operating Supply Current
@ 1
μ
s Cycle Time
2
I
CC1
5.0
mA
Read/Write Operating Supply Current
@ 70 ns Cycle Time
2
I
CC2
25.0
mA
Maximum Standby Current
I
SB1
100.0
μ
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| N16T1630C2BZ-55 | 16Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N16T1630C2BZ-70 | 16Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N16T1630C2BZ2 | 16Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N16T1630C2BZ2-55 | 16Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N16T1630C2BZ2-70 | 16Mb Ultra-Low Power Asynchronous CMOS SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| N16T1630C2BZ2 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:16Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N16T1630C2BZ2-55 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:16Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N16T1630C2BZ2-70 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:16Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N16T1630C2BZ-55 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:16Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N16T1630C2BZ-70 | 制造商:NANOAMP 制造商全稱(chēng):NANOAMP 功能描述:16Mb Ultra-Low Power Asynchronous CMOS SRAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。