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參數(shù)資料
| 型號： | N16T1630C2B |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 16Mb Ultra-Low Power Asynchronous CMOS SRAM |
| 中文描述： | 16Mb的超低功耗CMOS SRAM的異步 |
| 文件頁數(shù)： | 8/9頁 |
| 文件大小： | 245K |
| 代理商： | N16T1630C2B |
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
(DOC#14-02-007 REV F ECN# 01-1103)
8
NanoAmp Solutions, Inc.
N16T1630C2B
Ball Grid Array Package
Dimensions (mm)
D
E
e = 0.75
BALL
MATRIX
TYPE
SD
SE
J
K
6±0.10
8±0.10
0.375
0.375
1.125
1.375
FULL
SIDE VIEW
TOP VIEW
BOTTOM VIEW
E
D
A1 BALL PAD
CORNER (3)
0.90±0.10
0.23±0.05
0.15
0.05
Z
Z
1. 0.30±0.05 DIA.
1. DIMENSION IS MEASURED AT THE
MAXIMUM SOLDER BALL DIAMETER.
PARALLEL TO PRIMARY Z.
2. PRIMARY DATUM Z AND SEATING
PLANE ARE DEFINED BY THE
SPHERICAL CROWNS OF THE
SOLDER BALLS.
3. A1 BALL PAD CORNER I.D. TO BE
MARKED BY INK.
2. SEATING PLANE - Z
SD
SE
e
K TYP
J TYP
e
A1 BALL PAD
CORNER
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PDF描述 |
|---|---|
| N16T1630C2BZ | 16Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N16T1630C2BZ-55 | 16Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N16T1630C2BZ-70 | 16Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N16T1630C2BZ2 | 16Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N16T1630C2BZ2-55 | 16Mb Ultra-Low Power Asynchronous CMOS SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| N16T1630C2BZ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N16T1630C2BZ2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N16T1630C2BZ2-55 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N16T1630C2BZ2-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16Mb Ultra-Low Power Asynchronous CMOS SRAM |
| N16T1630C2BZ-55 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16Mb Ultra-Low Power Asynchronous CMOS SRAM |
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