- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384764 > MXD1210CWE (MAXIM INTEGRATED PRODUCTS INC) Nonvolatile RAM Controller PDF資料下載
參數(shù)資料
| 型號： | MXD1210CWE |
| 廠商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | Nonvolatile RAM Controller |
| 中文描述： | SPECIALTY MICROPROCESSOR CIRCUIT, PDSO16 |
| 封裝： | 0.150 INCH, MS-012AC, SOIC-16 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 87K |
| 代理商： | MXD1210CWE |
Nonvolatile RAM Controller
ELECTRICAL CHARACTERISTICS
(V
CCI
< VBATT; positive edge rate at VBATT1, VBATT2 > 0.1V/
μ
s, T
A
= T
MIN
to T
MAX
; unless otherwise noted.)
M
ELECTRICAL CHARACTERISTICS
(T
A
= T
MIN
to T
MAX
, unless otherwise noted.)
_______________________________________________________________________________________
3
V
CC
POWER TIMING CHARACTERISTICS
(V
CCI
= +4.75V to +5.5V, TOL = GND; or V
CCI
= +4.5V to +5.5V, TOL = V
CCO
; T
A
= T
MIN
to T
MAX
; unless otherwise noted.)
SYMBOL
PARAMETER
TIMING CHARACTERISTICS
(V
CCI
< +4.75V to +5.5V, TOL = GND; or V
CCI
< +4.5V , TOL = V
CCO
; T
A
= T
MIN
to T
MAX
; unless otherwise noted.)
Note 1:
Only one battery input is required. Unused battery inputs must be grounded.
Note 2:
I
CCO1
is the maximum average load current the MXD1210 can supply to the memories.
Note 3:
I
CCO2
is the maximum average load current the MXD1210 can supply to the memories in battery-backup mode.
Note 4:
CEO
can sustain leakage current only in battery-backup mode.
Note 5:
Guaranteed by design.
Note 6:
t
CE
max must be met to ensure data integrity on power loss.
2
5
20
V
CC
Slew-Rate Power-Down
μs
10
0
t
FB
t
R
t
CE
300
t
F
ms
t
REC
Recovery at Power-Up
Tolerance to battery power
To out-of-tolerance condition
μs
μs
V
CC
Slew-Rate Power-Up
CE
Pulse Width (Note 6)
1.5
UNITS
MIN
TYP
MAX
SYMBOL
CONDITIONS
PARAMETER
ns
5
5
10
10
20
22
t
PD
CE
Propagation Delay
MXD1210E
5
10
0
25
MXD1210C
MXD1210M
ns
t
PF
UNITS
CE
High to Power-Fail (Note 5)
R
L
= 1k
,
C
L
= 50pF
MIN
TYP
MAX
CONDITIONS
pF
7
C
OUT
Output Capacitance
pF
5
C
IN
Input Capacitance
UNITS
MIN
TYP
MAX
SYMBOL
CONDITIONS
PARAMETER
INPUT/OUTPUT CAPACITANCE
(Note 5)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
MXD1210C/E
MXD1210M
UNITS
5
μA
μA
Output open
CEO
Output Voltage
V
O
VBATT - 0.2
V
V
CCO
,
CEO
open
V
CCI
= 0V
VBATT - V
CCO
≤
0.2V
Quiescent Current (Note 1)
I
BATT
2
100
nA
Output Supply Current (Notes 3, 4)
I
CCO2
300
BATTERY-BACKUP MODE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MXD1210EPA | Nonvolatile RAM Controller |
| MXD1210ESA | Nonvolatile RAM Controller |
| MXD1210MJA | Nonvolatile RAM Controller |
| MXD1812 | HALF BRIDGE MOSFET CONTROLLER |
| MXD1811 | MOSFET Driver IC; Package/Case:28-SOIC; Fall Time, tf:70ns; High Side MOSFET Drive Type:On-Chip Charge Pump; Leaded Process Compatible:Yes; Load Capacitance:3300pF; Load Voltage Max:40V; MOSFET Driver Type:Quad Drivers, Full Bridge RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MXD1210CWE+ | 功能描述:IC CNTRLR NVRAM 16-SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 - 控制器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 控制器類型:靜態(tài) RAM（SRAM） 電源電壓:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C 封裝/外殼:16-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:16-SOIC W 包裝:管件 |
| MXD1210CWE+T | 功能描述:IC CNTRLR NVRAM 16-SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 - 控制器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 控制器類型:靜態(tài) RAM（SRAM） 電源電壓:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C 封裝/外殼:16-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:16-SOIC W 包裝:管件 |
| MXD1210CWE-T | 功能描述:監(jiān)控電路 RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
| MXD1210EPA | 功能描述:監(jiān)控電路 RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
| MXD1210EPA+ | 功能描述:存儲器控制器 Nonvolatile RAM Controller RoHS:否 制造商:Maxim Integrated |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。